physica status solidi (RRL) - Rapid Research Letters (Phys Status Solidi Rapid Res Lett )

Publisher: John Wiley & Sons

Description

physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state physics and materials science, from basic science to applications and devices. physica status solidi (RRL) - Rapid Research Letters, is presently the fastest peer-reviewed publication medium in solid state physics. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid state physics and materials science community. All manuscripts enjoy priority handling by the Editorial Office. Published Letters require positive approval by at least two independent referees. The journal covers topics such as preparation, structure, and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.

  • Impact factor
    2.39
  • 5-year impact
    2.43
  • Cited half-life
    3.00
  • Immediacy index
    0.53
  • Eigenfactor
    0.01
  • Article influence
    0.88
  • Website
    Physica Status Solidi - Rapid Research Letters website
  • Other titles
    Physica status solidi., Rapid research letters, Physica status solidi., Physica status solidi., PSS., Phys. stat. sol
  • ISSN
    1862-6270
  • OCLC
    80019385
  • Material type
    Document, Periodical, Internet resource
  • Document type
    Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

John Wiley & Sons

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • See Wiley-Blackwell entry for articles after February 2007
    • On personal web site or secure external website at authors institution
    • Not allowed on institutional repository
    • JASIST authors may deposit in an institutional repository
    • Non-commercial
    • Pre-print must be accompanied with set phrase (see individual journal copyright transfer agreements)
    • Published source must be acknowledged with set phrase (see individual journal copyright transfer agreements)
    • Publisher's version/PDF cannot be used
    • Articles in some journals can be made Open Access on payment of additional charge
    • 'John Wiley and Sons' is an imprint of 'Wiley-Blackwell'
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: With increasing annealing temperature (Tanneal), the magnitude of the electric fields for the antiferroelectric-to-ferro-electric (EAF) and ferroelectric-to-antiferroelectric (EFA) transition of a 9.2 nm thick Hf0.3Zr0.7O2 film decreased. The energy storage densities of the Hf0.3Zr0.7O2 films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm3, 40.4 J/cm3, and 28.3 J/cm3, respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf0.3Zr0.7O2 film crystallized at 600 °C was the largest (∼46) as it had the smallest EAF and EFA, whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of Tanneal was the optimum condition for energy storage application. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound-state energy on the defect potential.
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: Vertical phase separation of the polymer and fullerene molecules in bulk heterojunction organic solar cells influences the exciton dissociation, charge carrier transport and collection. This work compares the vertical phase separation of poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta [2,1-b:3,4-b′]dithiophene-2,6-diyl]] (C-PCPDTBT):[6,6]-phenyl C71 butyric acid methyl ester (PC71BM) and poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta [2,1-b:3,4-b′]dithiophene-siloe2,6-diyl]] (Si-PCPDTBT):PC71BM blend films, using X-ray photoemission spectroscopy depth profiles. The difference between the two polymers is the bridging atom, which is carbon for C-PCPDTBT and silicon for Si-PCPDTBT. Si-PCPDTBT exhibits enhanced polymer chain packing and crystallinity. We believe this enhanced chain packing provides a driving force during film drying which alters the vertical morphology. The different nature of vertical phase separation plays a role in determining the increased device performance observed for Si-PCPDTBT:PC71BM solar cells. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2014; 9999.
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    ABSTRACT: We report the heteroepitaxial growth of SrTiO3 thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal-organic precursor titanium tetraisopropoxide (TTIP) were co-supplied in the absence of additional oxygen. The carbonization of pristine Si surfaces during native oxide removal was avoided by freshly evaporating Sr into the hMBE reactor prior to loading samples. Nucleation, growth and crystallization behavior as well a structural properties and film surfaces were characterized for a series of 46-nm-thick SrTiO3 films grown with varying Sr to TTIP fluxes to study the effect of non-stoichiometric growth conditions on film lattice parameter and surface morphology. High quality SrTiO3 thin films with epitaxial relationship (001)SrTiO3 || (001)Si and [110]SrTiO3 || [100]Si were demonstrated with an amorphous layer of around 4 nm thickness formed at the SrTiO3/Si interface. The successful growth of high quality SrTiO3 thin films with atomically smooth surfaces using a thin film technique with scalable growth rates provides a promising route towards heterogeneous integration of functional oxides on Si. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 08/2014; 9999.
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    ABSTRACT: We report on the aerosol synthesis and optical characterization of ZnO/unoxidized graphene (UG) platelets nanocomposite films with high optical transparency (>85% at visible wavelengths). The ZnO/UG composite films, in which UG nanoplatelets are embedded in nano-grained ZnO, were fabricated from colloidal suspensions of UG platelets with an aqueous zinc precursor. From photoluminescence (PL) spectra of the UG composite films, it was found that PL intensity decreases with the addition of UG platelets. The features of PL intensity in the UG composites are in contrast to that of ZnO/graphene oxide (G-O) platelets composites, and can be explained by the absence of an oxygen vacancy filling effect, due to the unoxidized nature of UG and an increase in defect sites in its composites. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 08/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 08/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 08/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 08/2014; 8(8).
  • physica status solidi (RRL) - Rapid Research Letters 08/2014; 9999.
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    ABSTRACT: To address if the non-triphenylamine derivative hole transporting materials such as P3HT (poly-3-hexylthiophene) could also exhibit high device efficiency in mesoscopic MAPbI3 perovskite solar cells, we examined the effect of Li-TFSI (Li-bis(trifluoromethanesulfonyl) imide) and t-BP (4-tert-butylpyridine) additives added in P3HT on device performance. Unlike the triphenylamine HTMs, the P3HT thiophene HTM without amine moiety was not doped by the additives but its conductivity was significantly improved by the Li-TFSI/t-BP mediated additional hole conduction. By inclusion of Li-TFSI/t-BP additive, we could fabricate more efficient mesoscopic MAPbI3 perovskite solar cells with smaller hysteresis with respect to scan direction due to Li mediated additional hole conduction. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 08/2014; 9999.
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    ABSTRACT: This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell’s recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied Voc = 725 mV) and boron-doped passivated contacts (iVoc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts.
    physica status solidi (RRL) - Rapid Research Letters 07/2014;
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    ABSTRACT: Cu2ZnSnS4 (CZTS) and its related materials such as Cu2ZnSnSe4 (CZTSe) and Cu2ZnSn(S,Se)4 (CZTSSe) have attracted considerable attention as an absorber material for thin film solar cells due to the non-toxicity, elemental abundance, and large production capacity of their constituents. Despite the similarities between CZTS-based materials and Cu(In,Ga)Se2(CIGS), the record efficiency of CZTS-based solar cells remains significantly lower than that of CIGS solar cells. Considering that the difference between the two lies in the choice of the absorber material, the cause of the lower efficiency of CZTS-based solar cells can be isolated to the issues associated with CZTS-based materials and their related interfaces. Herein, these issues and the work done to understand and resolve them is reviewed. Unlike existing review papers, every unique region of CZTS-based solar cells that contributes to its lower efficiency, namely: (1) the bulk of the absorber, (2) the grain boundaries of the absorber, (3) the absorber/buffer layer interface, and (4) the absorber/back contact interface are surveyed. This review also intends to identify the major unresolved issues and the potential improvement approaches of realizing sizable improvements in the solar cells' efficiency, thus providing a guide as to where research efforts should be focused. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.
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    ABSTRACT: Modulated charge separation across (MO)/CH3NH3PbI3 and (MO)/PbI2/CH3NH3PbI3 (MO = TiO2, MoO3) interfaces was investigated by surface photovoltage (SPV) spectroscopy. Perovskite layers were deposited by solution-based one-step preparation and two-step preparation methods. An unreacted PbI2 layer remained at the interface between the metal oxide and CH3NH3PbI3 for two-step preparation. For the two-step preparation on TiO2, the SPV signal related to absorption in CH3NH3PbI3 increased in comparison to the one-step preparation due to electron transfer from CH3NH3PbI3 via PbI2 into TiO2 whereas the SPV signal related to defect transitions decreased. For the one-step preparation on MoO3, holes photogenerated in CH3NH3PbI3 recombined with electrons in MoO3. In contrast, a hole transfer from CH3NH3PbI3 towards MoO3 was blocked by the PbI2 interlayer for the two-step preparation on MoO3. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.
  • [Show abstract] [Hide abstract]
    ABSTRACT: First-principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi2Se3:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under compression and decreases under tension, whereas the dependence of the Rashba spin splitting on the strain is the opposite. Large values of αR = 1.57 eV Å at the bottom of the conduction band (electrons) and αR = 3.34 eV Å at the top of the valence band (holes) are obtained without strain. These values can be further enhanced to αR = 1.83 eV Å and αR = 3.64 eV Å, respectively, by 2% tensile strain. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.
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    ABSTRACT: We report the synthesis of single phase Bi3O2S3 sample and confirm the occurrence of bulk superconductivity with transition temperature at 5.8 K. The Bi3O2S3 super-conductor is categorized as the typical type-II supercon-ductor based on the results of both temperature and mag-netic field dependences of magnetization. Hall coefficient measurements give evidence of a multiband character, with a dominant conduction mainly by electron-like charge carriers. The charge carrier density is about 1.45 X 1019 cm3, suggesting that the system has very low charge carrier density.
    physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.
  • [Show abstract] [Hide abstract]
    ABSTRACT: Confocal Raman microscopy was applied in order to investigate the homogeneity of donor doping in Nb:SrTiO3 single crystals. Measurements of local Raman spectra revealed a systematic relation between the intensity of the Raman signal and the donor content of the crystals. We successfully elaborated a correspondence between the electronic structure and the intensity of the Raman lines using a crystal with macroscopic inhomogeneity as a demonstration sample. By mapping the distribution of the intensity of the Raman signal, we identified a characteristic inhomogeneous structure related to the presence of clusters with sizes of 5 µm to 20 µm, indicating inhomogeneous donor distribution caused by flaws introduced during crystal growth. Hence, we propose confocal Raman microscopy as a convenient technique for investigating the homogeneity and quality of doped perovskite surfaces, which are needed for various technological applications. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 07/2014; 9999.

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