physica status solidi (RRL) - Rapid Research Letters Journal Impact Factor & Information

Publisher: Wiley-VCH Verlag

Journal description

physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state physics and materials science, from basic science to applications and devices. physica status solidi (RRL) - Rapid Research Letters, is presently the fastest peer-reviewed publication medium in solid state physics. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid state physics and materials science community. All manuscripts enjoy priority handling by the Editorial Office. Published Letters require positive approval by at least two independent referees. The journal covers topics such as preparation, structure, and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.

Current impact factor: 2.34

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 2.343
2012 Impact Factor 2.388
2011 Impact Factor 2.218
2010 Impact Factor 2.66
2009 Impact Factor 2.56
2008 Impact Factor 2.147

Impact factor over time

Impact factor
Year

Additional details

5-year impact 2.43
Cited half-life 3.00
Immediacy index 0.53
Eigenfactor 0.01
Article influence 0.88
Website Physica Status Solidi - Rapid Research Letters website
Other titles Physica status solidi., Rapid research letters, Physica status solidi., Physica status solidi., PSS., Phys. stat. sol
ISSN 1862-6270
OCLC 80019385
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

Wiley-VCH Verlag

  • Pre-print
    • Author cannot archive a pre-print version
  • Post-print
    • Author cannot archive a post-print version
  • Restrictions
    • Upon funder agreement with publisher
  • Conditions
    • Pre-print may be deposited on personal intranet or institutional intranet repository, but not on a public repository
    • Pre-print must not updates with future versions
    • Published source must be acknowledged with set phrases (See policy)
    • Must link to publisher's site: http://www.interscience.wiley.com/
    • Publisher's version/PDF cannot be used
    • Some journal exceptions-check individual homepages
  • Classification
    ​ white

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: Experimental verification of the microscopic origin of resistance switching in metal/oxide/metal heterostructures is needed for applications in non-volatile memory and neuromorphic computing. Numerous reports suggest that resistance switching in NiO is caused by local reduction of the oxide layer into nanoscale conducting filaments, but few reports have shown experimental evidence correlating electroforming with site-specific changes in composition. We have investigated the mechanisms of reversible and irreversible electroforming in 250–500 nm wide pillars patterned from a single Ta/Ti/Pt/Ti-doped NiO/Pt/Ta heterostructure and have shown that these can coexist within a single sample. We performed in situ transmission electron microscopy (TEM) electroform- ing and switching on each pillar to correlate the local electron transport behavior with microstructure and composition in each pillar. DFT calculations fitted to electron energy loss spectroscopy data showed that the Ti-doped NiO layer is partially reduced after reversible electroforming, with the formation of oxygen vacancies ordered into lines in the 〈110〉 direction. However, under the same probing conditions, adjacent pillars show irreversible electroforming caused by electromigration of metallic Ta to form a single bridge across the oxide layer. We propose that the different electroforming behaviors are related to microstructural variations across the sample and may lead to switching variability. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 05/2015; 9999(9999). DOI:10.1002/pssr.201510063
  • physica status solidi (RRL) - Rapid Research Letters 05/2015; 9999(9999):n/a-n/a. DOI:10.1002/pssr.201510058
  • [Show abstract] [Hide abstract]
    ABSTRACT: Size, shape, and density-controlled metal nanostructure, Au nanodot lattices fabricated by electron beam lithography, were embedded in thin organic solar cell consisting of PC71BM:PCPDTBT. The effects of their size and density on device performance were examined. Even though dipole res-onances of Au nanodots were consistent with the absorption range of the active materials, there were no improvements in device performance under any sizes and densities. In addition, under high volume density of Au nanodots to PEDOT:PSS layer, the device performance was deteriorated. These results indicated that not only size and density but also other factors which determine light scattering characteristics greatly affect the device performance of solar cells. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 05/2015; 9999. DOI:10.1002/pssr.201510116
  • [Show abstract] [Hide abstract]
    ABSTRACT: Electroforming behaviours of Ta2O5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta2O5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta2O5 thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field- driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094–0.14 eV) was favourably compared with the hopping energy of electrons from the VO site to a nearby Ta site. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 05/2015; 9999(9999). DOI:10.1002/pssr.201510110
  • [Show abstract] [Hide abstract]
    ABSTRACT: The structural properties, electronic band structure and Bader charge of Sb2Te3 under hydrostatic pressure were simulated using density functional theory in order to study isostructural phase transitions (IPT) in Sb2Te3. The theoretical results showed that the axial ratio c /a did not exhibit any anomaly below 6 GPa. The variations of bond lengths were discontinuous at 2.5 GPa, which suggested considerable changes in interatomic interactions and provided sound support to the IPT. The effective charges of Sb and Te atoms showed significant discontinuous variations at 2.5 GPa, which revealed a strong redistribution of the electronic charge density and considerably changed interactions among bonding atoms. Thus, the IPT is originated from the considerable variation in the electronic charge density. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 05/2015; 9999. DOI:10.1002/pssr.201510091
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    ABSTRACT: We report the direct experimental observations of the glassy behaviour in Ni–Co–Mn–Sn ferromagnetic shape memory alloys by doping sufficient substitutional point defect Co into the Ni sites (9 at%). The results showed that high level of Co doping had caused the complete suppression of the martensitic transformation and introduction of a strain glass transition in Ni–Co–Mn–Sn alloys. The strain glass transition was definitively characterized by the dynamic mechanical anomalies following the Vogel–Fulcher relationship and the signature nonergodicity of the frozen glass using a zero-field-cooled/field-cooled heating measurement of static strain. The findings clarified the cause of vanishing of the martensitic transformation in Ni–Co–Mn–Sn alloy with high Co doping levels and the generality of glassy state in Ni–Mn based ferromagnetic shape memory alloys with high level of foreign elements doping. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 05/2015; 9999(9999). DOI:10.1002/pssr.201510124
  • physica status solidi (RRL) - Rapid Research Letters 04/2015; 9(4). DOI:10.1002/pssr.201570621
  • [Show abstract] [Hide abstract]
    ABSTRACT: Using binary and ternary chalcogenide nanoparticle solutions as precursors, a bi-layered CZTSSe film is formed after being annealed in selenium atmosphere. Based on the CZTSSe film, a high efficiency thin-film photovoltaic device (9.02% conversion efficiency) is made. Detailed characterizations of the device's performance and composition from XPS depth profiling are presented, and based on the results we discuss possible areas for further efficiency improvement. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 03/2015; 9999(9999). DOI:10.1002/pssr.201510048
  • [Show abstract] [Hide abstract]
    ABSTRACT: Excellent non-volatile memory characteristics have been demonstrated under the optoelectric conditions for organic phototransistors (OPTs). The high photosensitivity shown as reversible shifts in light-induced VTH exhibits a large memory window for programming caused by the excited immobile carriers (electron) trapped as a function of the electrical bias and the light intensity. The long life span of stored electrons also reveals promising behavior with respect to data retention as well as the electrical reliability to serve as a data storage medium with the non-volatile memory characteristic in OPTs. The VTH recovery accelerated by the reversible bias stress for the stored charges under irradiation shows that the erasing behavior is clearly brought by the discharge process of long-lived electrons occupied in deep states. Plausible mechanisms in the energy band are discussed for the programming and erasing process, which provides a fundamental understanding of the intrinsic charge storage behavior in OPTs. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 03/2015; 9999(9999). DOI:10.1002/pssr.201409563