physica status solidi (RRL) - Rapid Research Letters Journal Impact Factor & Information

Publisher: Wiley-VCH Verlag

Journal description

physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state physics and materials science, from basic science to applications and devices. physica status solidi (RRL) - Rapid Research Letters, is presently the fastest peer-reviewed publication medium in solid state physics. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid state physics and materials science community. All manuscripts enjoy priority handling by the Editorial Office. Published Letters require positive approval by at least two independent referees. The journal covers topics such as preparation, structure, and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.

Current impact factor: 2.14

Impact Factor Rankings

2015 Impact Factor Available summer 2016
2014 Impact Factor 2.142
2013 Impact Factor 2.343
2012 Impact Factor 2.388
2011 Impact Factor 2.218
2010 Impact Factor 2.66
2009 Impact Factor 2.56
2008 Impact Factor 2.147

Impact factor over time

Impact factor

Additional details

5-year impact 2.12
Cited half-life 3.40
Immediacy index 0.91
Eigenfactor 0.01
Article influence 0.74
Website Physica Status Solidi - Rapid Research Letters website
Other titles Physica status solidi., Rapid research letters, Physica status solidi., Physica status solidi., PSS., Phys. stat. sol
ISSN 1862-6270
OCLC 80019385
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

Wiley-VCH Verlag

  • Pre-print
    • Author cannot archive a pre-print version
  • Post-print
    • Author cannot archive a post-print version
  • Restrictions
    • Upon funder agreement with publisher
  • Conditions
    • Pre-print may be deposited on personal intranet or institutional intranet repository, but not on a public repository
    • Pre-print must not updates with future versions
    • Published source must be acknowledged with set phrases (See policy)
    • Must link to publisher's site:
    • Publisher's version/PDF cannot be used
    • Some journal exceptions-check individual homepages
  • Classification
    ​ white

Publications in this journal

  • physica status solidi (RRL) - Rapid Research Letters 09/2015; 9999. DOI:10.1002/pssr.201510290
  • [Show abstract] [Hide abstract]
    ABSTRACT: By high-throughput screening Fe–Sn–Cr, (Fe,Cr)3Sn2 (Fe53.5Cr6.5Sn40) with high potential as new hard magnetic compound is discovered. To produce the compound in large amounts a special procedure is needed. By quantitative microscopy and magnetometry promising intrinsic properties, Js ∼ 0.9 T, K1 ∼ 1.7 MJ/m3, TC ∼ 612 K, are found with K1 increasing with temperature. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2015; 9999. DOI:10.1002/pssr.201510243
  • physica status solidi (RRL) - Rapid Research Letters 09/2015; 9999(9999). DOI:10.1002/pssr.201510176
  • [Show abstract] [Hide abstract]
    ABSTRACT: Sulfur was embedded in atomic-layer-deposited (ALD) HfO2 films grown on Ge substrate by annealing under H2S gas before and after HfO2 ALD. The chemical states of sulfur in the film were examined by S K-edge X-ray absorption spectroscopy. It was revealed that the valences of S-ions were mostly –2 at Ge/HfO2 interface (GeSx or HfO2–ySy to passivate the interface), while they were mostly +6 in HfO2 layers (sulfates; HfO2–z(SO4)z). The leakage current density in post-deposi-tion-treated film was lower than that in pre-deposition-treated one. This suggests that the passivation of defects in oxide layer by sulfate ions is more effective to lower the leakage current rather than the interface defect passivation by S2– ions. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2015; 9999(9). DOI:10.1002/pssr.201510237
  • [Show abstract] [Hide abstract]
    ABSTRACT: We report on the uniform anti-reflection coating of TiO2 nanotube layers with a secondary material – indium trioxide (In2O3) – by atomic layer deposition (ALD). We provide for the first time the detailed evidence of the ALD deposited coating inside nanotubes for three different tube layers with aspect ratio up to ≈80, which is so far the highest aspect ratio reported for ALD-processed self-organized anodic TiO2 nanotubes. We show that uniform In2O3coating of the nanotubes strongly influences the overall reflectance of the layers due to intrinsic properties of In2O3. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2015; 9999(9). DOI:10.1002/pssr.201510245
  • [Show abstract] [Hide abstract]
    ABSTRACT: In spite of large spin coherence length in graphene due to small spin–orbit coupling, the created potential barrier and antiferromagnetic coupling at graphene/transition metal (TM) contacts strongly reduce the spin transport behavior in graphene. Keeping these critical issues in mind in the present work, ferromagnetic (Co, Ni) nanosheets are grown on graphene surface to elucidate the nature of interaction at the graphene/ferromagnetic interface to improve the spin transistor characteristics. Temperature dependent magnetoconductance shows unusual behavior exhibiting giant enhancement in magnetoconductance with increasing temperature. A model based on spin–orbit coupling operated at the graphene/TM interface is proposed to explain this anomalous result. We believe that the device performance can be improved remarkably tuning the spin–orbit coupling at the interface of graphene based spin transistor. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 08/2015; 9999(9). DOI:10.1002/pssr.201510195
  • [Show abstract] [Hide abstract]
    ABSTRACT: Fullerene networks are an exciting class of materials that may display exceptional physical properties. A new C70-fullerene network phase, synthesized at high-pressure, 7 GPa, and high-temperature, 600 °C, is presented. Its structure, determined by Rietveld analysis of the X-ray diffraction data combined with density functional theory modeling, consists of puckered polymerized layers where each molecule is bonded to three neighbors through 2 + 2 cycloaddition bonds, a new polymeric configuration unseen in other fullerene networks. This new C70-fullerene network structure adds to the previous zigzag structures, demonstrating the potential of C70 molecules as building blocks to synthesize new carbon phases. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 08/2015; 9999(9). DOI:10.1002/pssr.201510236
  • [Show abstract] [Hide abstract]
    ABSTRACT: GaN quantum dots (QDs) are realized on (0001) AlN templates by growing a thin GaN layer on an AlN buffer layer and applying a subsequent desorption step without ammonia present. A growth interruption (GRI), which is commonly applied after the GaN growth allowing for QD formation, is systematically investigated regarding the temperature, duration and initial GaN coverage. Without GRI the initial GaN layer exhibits a two-dimensional nonuniform growth at the step edges. In this study, the surface morphology only changes significantly if the GRI is performed without ammonia exposure. Thus, an initial two-dimensional GaN layer can be shaped into three-dimensional nanostructures. Presented coverage studies by atomic force microscopy (AFM) show desorption as the main driving force for island evolution. By tailoring the growth parameters, GaN QDs can be achieved. Uncapped GaN samples exhibit QDs with 1.2 nm in height and 30 nm in diameter. Additionally, capped GaN QDs exhibit excitonic luminescence lines at about 4.3 eV with FWHM down to 2 meV and an excitonic fine structure splitting of 7 meV. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 08/2015; 9999(9999). DOI:10.1002/pssr.201510217
  • physica status solidi (RRL) - Rapid Research Letters 08/2015; 9999(9999):n/a-n/a. DOI:10.1002/pssr.201510163
  • [Show abstract] [Hide abstract]
    ABSTRACT: We show the first direct measurement of the potential distribution within organic light emitting diodes (OLEDs) under operation and hereby confirm existing hypotheses about charge transport and accumulation in the layer stack. Using a focused ion beam to mill holes in the diodes we gain access to the cross section of the devices and explore the spatially resolved potential distribution in situ by scanning Kelvin probe microscopy under different bias conditions. In bilayer OLEDs consisting of tris(hydroxyquinolinato) aluminum (Alq3)/N, N ′-bis(naphthalene-1-yl)-N,N ′-bis(phenyl) benzidine (NPB) the potential exclusively drops across the Alq3 layer for applied bias between onset voltage and a given transition voltage. These findings are consistent with previously performed capacitance–voltage measurements. The behavior can be attributed to charge accumulation at the interface between the different organic materials. Furthermore, we show the potential distribution of devices with different cathode structures and degraded devices to identify the cathode interface as main culprit for decreased performance. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 08/2015; 9999(9999). DOI:10.1002/pssr.201510223