physica status solidi (RRL) - Rapid Research Letters (Phys Status Solidi Rapid Res Lett )

Publisher: John Wiley and Sons

Description

physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state physics and materials science, from basic science to applications and devices. physica status solidi (RRL) - Rapid Research Letters, is presently the fastest peer-reviewed publication medium in solid state physics. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid state physics and materials science community. All manuscripts enjoy priority handling by the Editorial Office. Published Letters require positive approval by at least two independent referees. The journal covers topics such as preparation, structure, and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.

  • Impact factor
    2.39
  • 5-year impact
    2.43
  • Cited half-life
    3.00
  • Immediacy index
    0.53
  • Eigenfactor
    0.01
  • Article influence
    0.88
  • Website
    Physica Status Solidi - Rapid Research Letters website
  • Other titles
    Physica status solidi., Rapid research letters, Physica status solidi., Physica status solidi., PSS., Phys. stat. sol
  • ISSN
    1862-6270
  • OCLC
    80019385
  • Material type
    Document, Periodical, Internet resource
  • Document type
    Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

John Wiley and Sons

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • See Wiley-Blackwell entry for articles after February 2007
    • On personal web site or secure external website at authors institution
    • Deposit in institutional repositories is not allowed
    • JASIST authors may deposit in an institutional repository
    • Non-commercial
    • Pre-print must be accompanied with set phrase (see individual journal copyright transfer agreements)
    • Published source must be acknowledged with set phrase (see individual journal copyright transfer agreements)
    • Publisher's version/PDF cannot be used
    • Articles in some journals can be made Open Access on payment of additional charge
    • 'John Wiley and Sons' is an imprint of 'Wiley'
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: PbS colloidal quantum dot (CQD)-based depleted bulk-heterojunction solar cells were constructed, using the 1.2 μm thick nanowire array infiltrated with PbS QDs bearing Br ligands. The long-term stability tests were performed on the solar cells without encapsulation in air under continuous light soaking using a Xe lamp with an AM1.5G filter (100 mW cm−2). Time course of solar cell performances during the tests showed two time periods with distinct behavior, that is, the initial transient time period and the relatively stable region following it. The power conversion efficiency was found to keep approximately 90% of the initial value at the end of the 3000 h light soaking test. The stability tests suggest that the PbS surface modification or passivation reactions play an important role in achieving such a high stability, and demonstrate that PbS CQD/ZnO nanowire array-based depleted bulk-heterojunction solar cells are highly stable. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 11/2014; 9999.
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    ABSTRACT: Monoclinic m-LaVO4 vanadate with the monazite-type structure was found to be a new favorable SRS-active crystal. Its two-phonon impulsive Stokes lasing has been recorded under near-IR femtosecond pumping. Knowledge acquired about the behavior of impulsive stimulated Raman scattering in the studied crystals may be useful for the physics of coherent optical phonons and for engineering of femtosecond lasers. The fundamental results obtained here will also motivate the search for crystals able to generate multiphonon impulsive SRS. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 11/2014; 9999.
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    ABSTRACT: The lattice dynamics in as-cast and nanocrystalline thermoelectric Bi2Te3 based p-type and n-type material were investigated using inelastic neutron scattering. Generalized densities of phonon states show substantial agreement between the lattice dynamics in as-cast samples and previous studies. The lattice dynamics in the nanocrystalline materials differ significantly from its as-cast counterparts in the acoustic phonon regime. In nanocrystalline p-type and n-type compounds, the average acoustic phonon group velocity was found to be reduced to 80(5)% and 95(2)% of the value in as-cast material. It is argued that point-defect and strain contrast scattering may play an important role for the understanding of lattice thermal conductivity in (nanocrystalline) Bi2Te3 based thermoelectrics beside the observed decrease of sound velocity. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 11/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 11/2014; 8(11).
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    ABSTRACT: Ion implantation offers new possibilities for silicon solar cell production, e.g. single side doping that can be structured in-situ with shadow masks. While phosphorus implantations can easily be annealed at low temperature, the annealing of boron implantations is challenging. In this study, we use low energy implantations of boron (1 keV and 5 keV) with a projected range of 5.6 nm and 21.2 nm that form defects causing charge carrier recombination after a low temperature anneal (950 °C, 30 min). An ozone-based wet chemical etching step is applied to remove this near surface damage. With increasing chemical etch-back the electrical quality (i.e. emitter saturation current density, J0e) improves continuously. The calculated limit for J0e was reached with an abrasion of 35 nm for 1 keV and 85 nm for 5 keV implantations, showing that the relevant defects causing charge carrier recombination are located very close to the surface, corresponding to the as-implanted profile depth. This emitter etch-back allows for the fabrication of defect free boron doping profiles with good sheet resistance uniformity (standard deviation <2%). With the resulting characteristics (sheet resistance <100 Ω/sq, surface doping concentration >5 × 1019 cm–3, J0e < 30 fA/cm2), these boron profiles are well suited for silicon solar cells. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 11/2014; 9999.
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    ABSTRACT: In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (∼100 µm) planar n-type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a-Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma-enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet-chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a-Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s–1 and an implied open-circuit voltage (Voc) of 741 mV. The passivation quality is excellent and comparable to other high quality a-Si:H(i) passivation. High-resolution transmission electron microscopy shows evidence of plasma-silicon interactions and a sub-nanometre interfacial layer. Using electron energy-loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 11/2014; 9999.
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    ABSTRACT: A low cost hydrothermal synthesis method to synthesize Mn-doped ZnO nanorods (NRs) with controllable morphology and structure has been developed. Ammonia is used to tailor the ammonium hydroxide concentration, which provides a source of OH– for hydrolysis and precipitation during the growth instead of HMT. The morphological, chemical composition, structural, and electronic structure studies of the Mn-doped ZnO NRs show that the Mn-doped ZnO NRs have a hexagonal wurtzite ZnO structure along the c-axis and the Mn ions replace the Zn sites in the ZnO NRs matrix without any secondary phase of metallic manganese element and manganese oxides observed. The fabricated PEDOT:PSS/Zn0.85Mn0.15O Schottky diode based piezoresistive sensor and UV photodetector shows that the piezoresistive sensor has pressure sensitivity of 0.00617 kPa–1 for the pressure range from 1 kPa to 20 kP and 0.000180 kPa–1for the pressure range from 20 kPa to 320 kPa with relatively fast response time of 0.03 s and the UV photodetector has both relatively high responsivity and fast response time of 0.065 A/W and 2.75 s, respectively. The fabricated Schottky diode can be utilized as a very useful human-friendly interactive electronic device for mass/force sensor or UV photodetector in everyday living life. This developed device is very promising for small-size, low-cost and easy-to-customize application-specific requirements. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 11/2014; 9999.
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    ABSTRACT: We theoretically study the strain effect on the Casimir interactions in graphene based systems. We found that the interactions between two strained graphene sheets are strongly dependent on the direction of stretching. The influence of the strain on the dispersion interactions is still strong in the presence of dielectric substrates but is relatively weak when the substrate is metallic. Our studies would suggest new ways to design next generation devices.
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound-state energy on the defect potential.
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: The robustness of the Dirac-like electronic states on the surfaces of topological insulators (TIs) during materials process-ing is a prerequisite for their eventual device application. Here, the (001) cleavage surfaces of crystals of the topological insulator Bi2Te2Se (BTS) were subjected to several surface chemical modification procedures that are common for electronic materials. Through measurement of Shubnikov–de Hass (SdH) oscillations, which are the most sensitive measure of their quality, the surface states of the treated surfaces were compared to those of pristine BTS that had been exposed to ambient conditions. In each case – surface oxidation, deposition of thin layers of Ti or Zr oxides, or chemical modification of the surface oxides – the robustness of the topological surface electronic states was demonstrated by noting only very small changes in the frequency and amplitude of the SdH oscillations. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: The preparation of high-quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm2/V s at a device-relevant carrier density of 1.8 × 1020 cm–3. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: Following the suggestion of Rodriguez-Fortuno et al. [Phys. Rev. Lett. 112, 033902 (2014)], we study the repulsive force acting on a electric dipole placed over a surface of epsilon-near-zero (ENZ) metamaterial. The dependence of the repulsive force value on the dipole size has been studied. We show that the effect of finite size drastically affects the values of the repulsive force as compared to the point-dipole case. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
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    ABSTRACT: With increasing annealing temperature (Tanneal), the magnitude of the electric fields for the antiferroelectric-to-ferro-electric (EAF) and ferroelectric-to-antiferroelectric (EFA) transition of a 9.2 nm thick Hf0.3Zr0.7O2 film decreased. The energy storage densities of the Hf0.3Zr0.7O2 films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm3, 40.4 J/cm3, and 28.3 J/cm3, respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf0.3Zr0.7O2 film crystallized at 600 °C was the largest (∼46) as it had the smallest EAF and EFA, whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of Tanneal was the optimum condition for energy storage application. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 10/2014; 9999.
  • physica status solidi (RRL) - Rapid Research Letters 09/2014; 8(9).
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    ABSTRACT: We report on low-temperature photoluminescence (PL) from aluminum oxide (Al2O3)-passivated c-Si wafers, which surprisingly exhibits clear signature of the formation of the so-called electron–hole liquid (EHL), despite the use of excitation powers for which the condensed phase is not usually observed in bulk Si. The elevated incident photon densities achieved with our micro-PL setup together with the relatively long exciton lifetimes associated with a good quality, indirect band-gap semiconductor such as our float-zone c-Si, are considered the key aspects promoting photogenerated carrier densities above threshold. Interestingly, we observe a good correlation between the intensity of the EHL feature in PL spectra and the passivation performance of the Al2O3 layer annealed at different temperatures. The change in the extension of the sub-surface space-charge region that results from the balance between the induced fixed charge in the Al2O3 and the defect states at the alumina/Si interface is at the origin of the observed correlation. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2014; 9999.
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    ABSTRACT: Two-dimensional group-IV lattices silicene and germanene are known to share many of graphene's remarkable mechanical and electronic properties. Due to the out-of-plane buckling of the former materials, there are more means of electronic funtionalization, e.g. by applying uniaxial strain or an out-of-plane electric field. We consider monolayer hexagonal Sn (stanene) as an ideal candidate to feasibly implement and exploit graphene physics for nanoelectronic applications: with increased out-of-plane buckling and sizable spin–orbit coupling it lends itself to improved Dirac cone engineering. We investigate the ballistic charge transport regime of armchair Sn nanoribbons, classified according to the ribbon width W = {3m – 1, 3m, 3m + 1} with integer m. We study transport through (non-magnetic) armchair ribbons using a combination of density functional theory and non-equilibrium Green's functions. Sn ribbons have earlier current onsets and carry currents 20% larger than C/Si/Ge-nanoribbons as the contact resistance of these ribbons is found to be comparable. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
    physica status solidi (RRL) - Rapid Research Letters 09/2014; 9999.