Electronic Materials Letters (ELECTRON MATER LETT )

Description

  • Impact factor
    1.87
    Show impact factor history
     
    Impact factor
  • 5-year impact
    1.34
  • Cited half-life
    2.70
  • Immediacy index
    0.11
  • Eigenfactor
    0.00
  • Article influence
    0.30
  • ISSN
    1738-8090
  • OCLC
    71278627
  • Material type
    Periodical
  • Document type
    Journal / Magazine / Newspaper

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: In this letter the evolution of the surface topography of a niobium superconducting radio frequency cavity caused by different plasma etching modes (isotropic and anisotropic) is studied by the three-dimensional level set method. The initial rough surface is generated starting from an experimental power spectral density. The time dependence of the rms roughness is analyzed and the growth exponential factors β are determined for two etching modes (isotropic and anisotropic) assuming that isotropic etching is a much more effective mechanism of smoothing. The obtained simulation results could be useful for optimizing the parameters of the etching processes needed to obtain high quality niobium surfaces for superconducting radio frequency cavities.
    Electronic Materials Letters 11/2014;
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    ABSTRACT: In this work photonic energy from a high power xenon flash lamp is used for soldering thin chips on polyimide and polyester foil substrates using standard Sn-Ag-Cu lead free alloys. The absorption of the xenon light pulse leads to rapid heating of components and tracks up to temperatures above the solder melting temperature, while the temperature in the organic foil substrates remains low. Due to its high transparency the temperature in the delicate polyester foil remains low enough to avoid damage and allows fast soldering with standard lead-free alloys. The technology is fast and could be applied in-line in roll-to-roll fabrication of flexible electronics. In-situ temperature measurements were performed and compared to finite element model predictions of the temperature in the chip during and after application of the photonic pulse. The accuracy of the model is within 10 °C for the tested samples, which allows it to be used in developing photonic flash soldering compatible circuit designs.
    Electronic Materials Letters 10/2014; 10(6):1175-1183.
  • Electronic Materials Letters 07/2014;
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper reports the synthesis of HCl-doped Au@polyaniline (Pani) nanocomposite fibers by the in situ oxidative polymerization of aniline in the presence of gold nanoparticles. Thus prepared nanocomposite fibers were characterized by SEM, TEM, XRD, Raman spectroscopy, XPS, UV-visible diffused reflectance spectroscopy, TGA, and DSC. The Au@Pani nanocomposite fibers showed superior DC electrical conductivity to HCl doped Pani, which might be due to the increased mobility of the charge carriers after the incorporation of gold nanoparticle in Pani. Au@Pani also exhibited a better ammonia sensing and recovery response than Pani, which might be due to the increase in the surface area of Pani after the incorporation of gold nanoparticles.
    Electronic Materials Letters 07/2014;
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    ABSTRACT: The densification behavior and electrical conductivity of Ce0.8Y0.2O1.9 ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % Sr2Ga2O5 and then to decrease upon further Sr2Ga2O5 addition. It was possible to obtain dense Ce0.8Y0.2O1.9 ceramics with 95% of the theoretical density using a 0.5 mol. % Sr2Ga2O5-added specimen sintered at 1250°C for 5 h, whereas pure Ce0.8Y0.2O1.9 ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % Sr2Ga2O5-added specimen showed a maximum value of 4.43 × 10−3Ω −1·cm−1 at 700°C. The addition of Sr2Ga2O5 was found to promote the sintering properties and electrical conductivities of Y2O3-doped CeO2.
    Electronic Materials Letters 07/2014; 10(1).
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    ABSTRACT: The effect of a trace Al addition (0, 0.01, 0.05 and 0.1 wt. %) in the Sn-2Ag-5Bi solder alloy on wettability and intermetallic compound (IMC) formation of the alloy was investigated. The interface between the solder and a Cu(17 μm)/Ni(4 μm)/Au (0.02 μm) under bump metallized (UBM) substrate was studied. The microstructure of the bulk solder and the interface of the soldered joints was observed in a scanning electron microscope (SEM), and the thickness of the interface reaction layers was estimated. Various IMC phases were identified by energy dispersive spectroscopy (EDS) and by the electron probe micro analyzer (EPMA). The experimental results indicated that the addition of 0.01 wt.% Al in the Sn-2Ag-5Bi solder alloy significantly improved the wettability of the solder more than the other Al additions did. The IMC layer between the bulk Sn-2Ag5Bi-0.01Al solder and the Cu/Ni/Au UBM substrate was almost uniform and thinner than those between the solders containing 0, 0.05, and 0.1 wt.% Al and their respective Cu/Ni/Au UBM substrates. Furthermore, the growth rate of the IMC layer between the Sn-2Ag-5Bi-0.01Al solder and Cu/Ni/Au UBM after 1 to 10 reflow times was lower than that of the IMC layer between the Sn-2Ag-5Bi solder and Cu/Ni/Au UBM. The IMCs in the solder joint interface (e.g., Ni3Sn4) of the Sn-2Ag-5Bi-0.01Al solder were well distributed near the Bi and fine Ag3Sn. The addition of 0.01 wt. % Al in the Sn-2Ag-5Bi solder yielded the best wetting properties for the solder and the minimum growth rate of the IMCs because it increased the nucleation rate of Ag3Sn and uniformly segregated the Bi phase.
    Electronic Materials Letters 04/2014;
  • Electronic Materials Letters 03/2014; Will be published.
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    ABSTRACT: Over the last decade in materials science, molecular electronics has emerged as one of the most rapidly developing interdisciplinary research areas with the prospects of ultimate miniaturization and integration of functional organic species with traditional silicon based semiconductor technology. To this end, fundamental studies to investigate the electrical and optical properties of organic nanomaterials deserve special attention. In this work, conductive probe atomic force microscopy (CP-AFM) and Raman spectroscopy have been performed on a new class of ionic materials, referred to as Group of Uniform Materials Based on Organic Salts (GUMBOS) and nanoparticles derived from these GUMBOS, termed as nanoGUMBOS. The GUMBOS investigated in this study are 1,1´-Diethyl-2,2´-cyanine bis (trifluoromethanesulfonyl) imide ([PIC][NTf2]) and 1,1´-Diethyl-2,2´-cyanine bis (pentafluoromethanesulfonyl) imide ([PIC][BETI]), which have been synthesized by use of a facile, template free anion exchange reaction between their respective parent compounds, followed by an ultrasonication assisted, additive free re-precipitation reaction to obtain the nanoscale particles (nanoGUMBOS). The ([PIC][NTf2] nanoGUMBOS were found to self-assemble into distinct diamond-like, trapezoid structures whereas [PIC][BETI] exhibited rod-like structures. [PIC][NTf2] nanoGUMBOS induced ~25 and ~38 times enhancement in the Raman signal intensity as compared to the parent compound [PIC][I] and [PIC][BETI] nanoGUMBOS respectively. In conjunction with the results of Raman spectra, the current-voltage (I-V) data obtained by CP-AFM are also presented as first-time evidence of electrical performance exhibited by these unique class of materials. The results reported in this study are indicative of their potential incorporation into next generation organic thin film applications in optoelectronics, dye-sensitized solar cells, and chemical sensors.
    Electronic Materials Letters 03/2014;
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    ABSTRACT: The present work reports cadmium-free colloidal ZnS:Al quantum dot (QD) based white quantum dot light-emitting diodes (QD-LEDs). The device was fabricated with a structure of ITO/PEDOT:PSS/PVK/QDs/TPBi/LiF/Al using synthesized ZnS:Al QDs which has 393 nm of peak wavelength and sub peaks in visible wavelength. White emission with high color rending index (CRI) was achieved by the combination of blue emission from PVK and ZnS:Al QDs, electroplex emission at the interface between PVK and ZnS:Al QDs, and Al traps/defects emission, which are controlled by electrical aging effect. The characteristic of our device shows the potential for spectrum tunable and Cd-free white QD-LEDs in the near future.
    Electronic Materials Letters 03/2014; 10(2):479-483.