# Electronic Materials Letters (ELECTRON MATER LETT)

## Description

• Impact factor
1.87
Show impact factor history

Impact factor
.
Year
• ISSN
1738-8090
• OCLC
71278627
• Material type
Periodical
• Document type
Journal / Magazine / Newspaper

## Publications in this journal

• ##### Article: Multifractal characterization of water soluble Copper phthalocyanine based films surfaces
Electronic Materials Letters 11/2013;
• ##### Article: The optical and electrical properties of AP-MOVPE GaSb grown using TEGa and TMSb
Electronic Materials Letters 09/2013;
• ##### Article: Structural and electrical properties of (1-x)Bi5Nb3O15-xBi4Ti3O12 ceramics and 0.96Bi5Nb3O15–0.04Bi4Ti3O12 thin films grown by pulsed laser deposition
[hide abstract]
ABSTRACT: A 0.96Bi5Nb3O15-0.04Bi4Ti3O12 (0.96B5N3-0.04B4T3) ceramic showed a high dielectric constant (k) of 314, probably due to the increased dipole moment caused by the replacement of Nb5+ ions by Ti4+ ions. The 0.96B5N3–0.04B4T3 films were well formed on the Pt/Ti/SiO2/Si substrate. Films grown at temperatures lower than 400°C had an amorphous phase but small Bi3NbO7 crystals were considered to have been formed in these films. The film grown at 300°C exhibited a high k value of 83 with a low dielectric loss of 0.5%. The leakage current density of the film grown at low oxygen pressure (OP) was high and decreased with increasing OP to a minimum at an OP of 200 mTorr, after which it increased with further increase in OP. This variation of the leakage current density with OP was explained by the existence of oxygen vacancies and interstitial oxygen ions in the film. The 0.96B5N3—0.04B4T3 film grown under 200 mTorr OP exhibited a high k value of 83, a low leakage current density of 8 & 10−8A/cm2 at 0.3MV/cm and a high breakdown field of 0.4MV/cm.
Electronic Materials Letters 08/2013; 5(1).
• ##### Article: Effect of ion-beam assisted deposition on resistivity and crystallographic structure of Cr/Cu
[hide abstract]
ABSTRACT: Ion-beam assisted deposition (IBAD) for Cr/Cu coatings was investigated. For high density and electric resistivity, IBAD was found to be an appropriate method. The density was increased from 8.60 g/cm3 to 8.85 g/cm3, depending on IBAD conditions, and the resistivity was increased from 6.4 μΩ·cm to 7.2 μΩ·cm. It is also suggested that the crystallographic orientations of polycrystalline Cu surfaces were able to be aligned to (111) planes by the IBAD process.
Electronic Materials Letters 08/2013; 5(3).
• Source
##### Article: Microstructure evolution of Al-1% Si bonding wire for microelectronic reliability
[hide abstract]
ABSTRACT: In order to determine the reliability of Al-1% Si bonding wires, the microstructure of an annealed wire, including grain morphology and secondary phases, was investigated by conventional transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The grains are extremely long and thin parallel to the drawn direction, and the average grain size is about 600 nm to 700 nm. Nano-sized thin plate-like Si crystals of about 10 nm length and a few monolayers thickness were observed, and their crystallography and morphology are discussed in this paper.
Electronic Materials Letters 08/2013; 5(3).
• ##### Article: Electrical properties of metal film with micro-holes on a polymer substrate: Applications for flexible electronic devices
[hide abstract]
ABSTRACT: A new type of metal film on a polyethylene terephthalate (PET) substrate was fabricated with a pattern of holes using a photolithography-based wet process, and its application to the interconnection designof flexible electronic devices was demonstrated. The intended diameters for the holes in the patterns of the metal films were 10 μm, 30μm and 50μm. The hole-patterned samples showed much better electrical properties in the high-strain region. Furthermore, the absolute value of the electrical resistance for the hole-patterned sample was low, even by comparison with a no-pattern sample, for some of the critical values of tensile strain. The results of this study show potential application to the interconnection designof flexible electronic devices.
Electronic Materials Letters 08/2013; 5(4).
• ##### Article: High density plasma etching of platinum films in BCl3/Ar and CF4/Ar inductively coupled plasmas
[hide abstract]
ABSTRACT: The etch characteristics of platinum films and the etch selectivities for platinum over the mask materials in BCl3/Ar and CF4/Ar ICP discharges have been investigated to establish a process window for the thick platinum structure formation in MEMS devices. Maximum etch rates of ≈1800 Å/minute and ≈1200 Å/minute were obtained at a moderate ICP source power (750 W) and a relatively high rf chuck power (400 W) condition for CF4/Ar and BCl3/Ar ICP discharges, respectively. Maximum etch selectivities of ≈2.6 for platinum over Al and of ≈2.1 for platinum over ZnO were obtained. CF4/Ar ICP etching with aluminum mask layer seems to be a very attractive tool for the fabrication of MEMS devices containing a thick platinum structure layer.
Electronic Materials Letters 08/2013; 5(4).
• ##### Article: Understanding the photoluminescence mechanisms of nanophosphor surface
[hide abstract]
ABSTRACT: To understand the photoluminescence (PL) mechanisms of nanophosphors, various experiments were conducted. The SnO2:Eu3+ nanoparticles were synthesized and calcined at various temperatures. The increase of the PL intensities with the increasing calcination temperature was due to the removal of the hydroxyl groups, and to the decrease of the surface area caused by the growth of the nanoparticles. Additionally, Mndoped zinc sulfide monodispersed-nanoparticles were synthesized. The influence of Mn doping concentration was investigated with the decrease of crystallinity and capping. The increased crystallinity and removal of water/organic capping were suggested for the reasons of increased PL property.
Electronic Materials Letters 08/2013; 5(4).
• ##### Article: The effects of C-rate on the discharge capacities of LiNi1−yMyO2 (M=Ni, Ga, Al and/or Ti) cathodes
[hide abstract]
ABSTRACT: LiNi1−yM{y}O{2} specimens with compositions of LiNiO2, LiNi0.975Ga0.025O{2}, LiNi0.975Al0.025O2, LiNi0.995Ti0.005O2 and LiNi0.990Al0.005Ti0.005O2 were synthesized by wet milling and solid-state reaction method. All the synthesized samples possessed the α-NaFeO structure of the rhombohedral system (space group; $R\bar 3m$ ) with no evidence of any impurities. Among the α-LiNiO2 cathodes prepared with the weight ratios of LiNiO2: acetylene black: binder = 85≠10≠5, 85≠12≠3 and 90≠7≠3, the cathode with the weight ratio of 85≠10≠5 had the best cycling performance, with a discharge capacity degradation rate of 1.06 mAh/g/cycle and a discharge capacity at n=20 of 143.5 mAh/g. Among all the samples, LiNi0.990Al0.005Ti0.005O2 had the highest first discharge capacities at 0.1 C, 0.2 C and 0.5 C rates. That sample had the smallest R-factor value, indicating that it had the lowest degree of cation mixing. Among all the samples, LiNi0.975Al0.025O2 showed the lowest rate of decrease in the first discharge capacity with C rate. The first discharge capacities at 0.1 C, 0.2 C and 0.5 C rates were 170.5 mAh/g, 155.0 mAh/g and 124.2 mAh/g, respectively.
Electronic Materials Letters 08/2013; 5(4).
• ##### Article: Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching
[hide abstract]
ABSTRACT: Scanning Electron Microscopy (SEM) combined with selective electrochemical etching was used to assess two-dimensional (2-D) dopant profiles in p+/n junctions that formed by using BF2 implantation followed by annealing. It was discovered that the electrochemically delineated junction depth (dj) increased with an increase in the BF2 implantation energy. It was also found that, considering the mechanism of selective electrochemical etching, dj represents the junction edge that corresponded to the electrically-activated B atoms. The simulated 2-D dopant profiles of the experimental conditions were directly compared with the SEM results, and the implications of the discrepancies are discussed in this paper.
Electronic Materials Letters 08/2013; 6(2).
• ##### Article: Sintering and crystallization behavior in B2O3 contained Li2O-Al2O3-SiO2 glass
[hide abstract]
ABSTRACT: This study looks at crystallization and sintering behavior in B2O3 containing Li2O-Al2O3-SiO2 glass powder. The sintered sample was produced with glass powders measuring 44 μm. The relative density and transmittance of the sintered samples showed the highest value at the temperature of 650°C. At temperatures higher than 650°C, crystal growth occurred to decrease the densification of B2O3-Li2O-Al2O3-SiO2 (BLAS) glass powder. The main crystalline phase in the glass powder was â-spodumene. From non-isothermal differential thermal analysis, the crystallization of particles (Φ = 44 μm) was observed at 640°C to 684°C with respect to the heating rate. The activation energy of crystallization (EC) and the Avrami constant (n) calculated by Kissinger and Ozawa equations indicated that the surface and the bulk crystallization occurred simultaneously in the glass. The optimum sintering temperature of this glass powder was 650°C without crystal growth of β-spodumene, although nucleation or nano-crystal growth occurred.
Electronic Materials Letters 08/2013; 6(2).
• ##### Article: Synthesis of LiCo1/3Ni1/3Mn1/3> O2> by a simple combustion method and electrochemical properties
[hide abstract]
ABSTRACT: LiCo1/3Ni1/3Mn1/3O2 was synthesized by a simple combustion method and its electrochemical properties were examined. The XRD patterns of the samples calcined at 900°C and 1,000°C showed sharp peaks for an $R\bar 3$ m structure with clear splitting between the (006) and (102) peaks and between the (108) and (110) peaks. The size of the particles increased as the calcination temperature rose. The samples after combustion, and after combustion and calcinations, were analyzed by FT-IR. The samples calcined at 900°C and 1,000°C had similar a and c values, and similar first discharge capacities (176 mAh/g and 177 mAh/g, respectively, at 20 mA/g), but the sample calcined at 900°C had better cycling performance. The sample calcined at 900°C had smaller particles and more uniform particle sizes than the sample calcined at 1,000°C.
Electronic Materials Letters 08/2013; 6(3).
• ##### Article: Thermoelectric properties of Co4−xMnxSb12−ySny skutterudites
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ABSTRACT: Mn/Sn-doped CoSb3 (Co4-xMnxSb12−ySny) skutterudites were synthesized by mechanical alloying, and their thermoelectric properties were examined. A single δ-phase was obtained successfully by post-annealing and hot pressing; however, MnSb phase was observed in Co2.5Mn1.5Sb12 and Co3MnSb11.2Sn0.8 specimens. Temperature dependence of the electrical conductivity suggests that the Mn/Sn-doped specimens are degenerate semiconductors. Every specimen had a positive Seebeck coefficient, and a Co3MnSb11.6Sn0.4 specimen exhibited the highest value. Mn doping caused a decrease in the Seebeck coefficient, but it could be enhanced by Mn/Sn double doping, possibly due to charge compensation. The thermal conductivity was desirably very low, and this originated from ionized impurity-phonon scattering. Thermoelectric properties were remarkably improved by Mn/Sn doping, and a maximum figure of merit, ZT = 0.54 was obtained at 723 K in the Co3MnSb11.6Sn0.4 specimen.
Electronic Materials Letters 08/2013; 7(1).
• ##### Article: Invited paper: Preparation and electrochemical characterization of doped spinel LiMn1.88Ge0.1Li0.02O4 cathode material
[hide abstract]
ABSTRACT: LiMn1.88Ge0.1Li0.02O4 cathode material is investigated with the aim of improving the electrochemical performance of spinel LiMn2O4 by substituting stoichiometric Ge and Li into Mn sites. While the formal oxidation number of Mn ions is still + 3.5 after doping, it is expected that the difference in electronegativity between Mn and Ge induces a local change in the bonding nature of Mn-O that in turn increases the effective oxidation state of Mn ions. The increase in the effective oxidation state results in a reduction of Mn dissolution, thus providing structural stability and cyclability. The bulk-synthesized LiMn1.88Ge0.1Li0.02O4 exhibits capacity retention of 63% of the first cycle capacity (124 mAh/g) after 100 cycles at 1C while LiMn2O4 exhibits only 44% retention.
Electronic Materials Letters 08/2013; 7(2).
• ##### Article: The synthesis of carbon nanotubes (CNTs) by catalytic CVD using a Fe/Co-supported zeolite template
[hide abstract]
ABSTRACT: Well-shaped faujasite-type zeolite (FAU) octahedral crystals 15 ìm in size were synthesized hydrothermally in an autoclave. The synthesis solution had a molar composition of 3.5 Na2O : Al2O3 : 2.1 SiO2 : 1000 H2O. With this zeolite being the template, multi-walled carbon nanotubes (MWNTs) were synthesized from Fe- and Co-supported zeolite (FAU) by catalytic chemical vapor deposition (CCVD) using acetylene as the carbon source. Field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), and Raman spectroscopy investigations demonstrated a growth tendency in terms of the number of wall layers and yield of carbon nanotubes (CNTs) as the iron and cobalt contents were increased. It is inferred that Co is more effective than Fe for synthesizing high-quality CNTs.
Electronic Materials Letters 08/2013; 7(2).
• ##### Article: Optical properties of Si1-xGex quantum dots grown using RPCVD
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ABSTRACT: The optical properties of Si1-xGex quantum dots (QDs) grown directly onto Si (001) substrates without a buffer layer using the reduced pressure chemical vapor deposition (RPCVD) system have been investigated. From the results of the EDX and XRD analyses of the Si1-xGex QD structures, the Ge composition in the Si1-xGex QDs was determined to be approximately 30% and 40%, for the respective analyses, and the values of the residual strain ε of the Si0.7Ge0.3 and Si0.7Ge0.4 samples were calculated as -0.0095 and -0.0089, respectively. Five peaks were observed in the Raman spectra, which correspond to the vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and the Si1-xGex QD related peaks were located at 486 cm-1 and 490 cm-1. The transition peaks related to the QD region observed in the photocurrent spectrum were preliminarily assigned to the electron-heavy hole (e-hh) and electron-light hole (e-lh) transitions. The no-phonon (NP) peak of Si1-xGex QDs was clearly observed in PL spectrum.
Electronic Materials Letters 08/2013; 7(2).
• ##### Article: Properties of low-temperature passivation of silicon with ALD Al2O3 films and their PV applications
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ABSTRACT: Low-temperature-deposited aluminium oxide (Al2O3) thin films were grown on p-type Si substrates by the remote plasma atomic layer deposition (RPALD) technique. The RPALD technique uses an alternative trimethylaluminum precursor and oxygen radicals to obtain good interface properties for metal-insulatorsemiconductor (MIS) inversion-layer solar cell applications. Si MIS capacitors with ultra-thin Al2O3 (film thickness ranges from 1 nm to 6 nm) gate dielectric and SiNx films were fabricated at 300°C and at room temperature (RT), respectively. Low-temperature-deposited Al2O3 and SiNx films were characterized by electrical properties such as capacitance-voltage (C-V), and current-voltage (I–V). The interface state density (Dit) of the MIS capacitors with SiNx films and without SiNx films was derived from the 1 MHz frequency C-V curves. By using ultra-thin RPALD Al2O3, RT-sputtered SiNx films and a simple fabrication-processing sequence, MIS solar cells were fabricated on 1 Ω·cm to 10 Ω·cm p-Si wafers. The fabricated MIS solar cell with passivated Al2O3 and SiNx films has 8.21% efficiency.
Electronic Materials Letters 08/2013; 7(2).
• ##### Article: Synthesis and characterization of hollow silver spheres at room temperature
[hide abstract]
ABSTRACT: Hollow silver spheres were synthesized at room temperature using sodium borohydride (NaBH4) as the reducing reagent and poly (vinyl pyrrolidone) (PVP) as the surfactant. The size of the synthesized hollow spheres ranged from 120 to 250 nm, and the surface was composed of many smaller silver nanoparticles. The asobtained product was characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV-vis absorption spectra. The amount of PVP had a significant effect on the morphology of the resultant silver samples. With an increasing concentration of PVP, the silver products possessed rod-like and shuttle-like shapes. The UV-vis spectrum demonstrated that the broad absorption peak centered at 417 nm resulted from the surface plasmon resonance (SPR) excitation of silver.
Electronic Materials Letters 08/2013; 7(2).
• ##### Article: F-doped ZnO by sol-gel spin-coating as a transparent conducting thin film
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ABSTRACT: This paper reports a simple non-alkoxide sol-gel route for depositing F-doped ZnO thin film on glass substrates. Ammonium fluoride and zinc acetate were used as the dopant precursor and starting material for ZnO, respectively. After the first crystallization at 550°C in air, the sol-gel spin coated ZnO:F thin films at a F concentration 5 at. % degraded the microstructures, electrical conductivity, and optical transmittance. The second post-heat-treatment at 450°C in a reducing environment resulted in higher electrical resistivity than the first post-heat-treatment in air.
Electronic Materials Letters 08/2013; 7(2).
• ##### Article: Effect of temperature on the dielectric properties of carbon black-filled polyethylene matrix composites below the percolation threshold
[hide abstract]
ABSTRACT: The temperature dependence of dielectric properties of carbon black-filled polyethylene matrix composites below the percolation threshold was studied based on the effect medium approximation theory (EMA theory). Although the literature on calculation based on the EMA theory by changing the parameters is vast, an overall discussion taking into account the EMA theory is required to explain the dielectric properties of the composites and their temperature dependence. Changes of the dielectric properties of carbon black-filled PMC and their temperature dependence below the percolation threshold for the volume fraction of carbon black have been discussed based on the EMA theory. The composites satisfy the universal law of conductivity above the percolation threshold, whereas it gives the critical exponent of s = 1 for dielectric constant below percolation threshold. The rates of the decrement of both % changes of dielectric constant and dielectric loss factor for temperature become larger with an increase in the volume fraction below percolation threshold. By incorporating the effect of thermal expansion into the EMA theory, the temperature dependence of dielectric properties is successfully explained.
Electronic Materials Letters 08/2013; 7(3).

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