Electronic Materials Letters (ELECTRON MATER LETT)

Publisher: Springer Verlag

Journal description

Current impact factor: 3.98

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 3.977
2012 Impact Factor 1.87
2011 Impact Factor 1.819
2010 Impact Factor 1.594
2009 Impact Factor 1.292

Impact factor over time

Impact factor
Year

Additional details

5-year impact 1.34
Cited half-life 2.70
Immediacy index 0.11
Eigenfactor 0.00
Article influence 0.30
ISSN 1738-8090
OCLC 71278627
Material type Periodical
Document type Journal / Magazine / Newspaper

Publisher details

Springer Verlag

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Author's pre-print on pre-print servers such as arXiv.org
    • Author's post-print on author's personal website immediately
    • Author's post-print on any open access repository after 12 months after publication
    • Publisher's version/PDF cannot be used
    • Published source must be acknowledged
    • Must link to publisher version
    • Set phrase to accompany link to published version (see policy)
    • Articles in some journals can be made Open Access on payment of additional charge
  • Classification
    ​ green

Publications in this journal

  • Electronic Materials Letters 03/2015; DOI:10.1007/s13391-015-4370-0
  • [Show abstract] [Hide abstract]
    ABSTRACT: We provide a review and analysis of research on crystalline silicon thin-film solar cells (CSiTFSCs) on ceramic substrates. The use of foreign substrates (non-silicon materials) for the processing of crystalline silicon solar cells could potentially decrease solar-grade silicon consumption and significantly reduce module costs. In order to enhance the efficiency potential of CSiTFSCs on ceramic substrates, high-temperature silicon film deposition is favored. High-quality electronic-grade silicon films are intended to be deposited at higher temperature as it can help increase both deposition rates and grain sizes. The potential low-cost ceramic substrates have some major restrictions in terms of cell processing technology at high temperatures. In this paper, an overview of the research on thin-film solar-cell technologies on ceramic substrates is presented. Major processing steps for CSiTFSC such as substrate/intermediate layer requirements and silicon thin-film deposition at high temperatures will be discussed. So far, devices have been demonstrated with efficiencies up to 13.4% on graphite, 8.2% on mullite, and 9.4% on silicon nitride (Si3N4)ceramic substrates.
    Electronic Materials Letters 03/2015; 11(2). DOI:10.1007/s13391-014-4254-8
  • [Show abstract] [Hide abstract]
    ABSTRACT: Composition-tunable ternary Cd1−x Znx S nanocrystals are among the most extensively studied alloyed semiconductor nanocrystals. However, they are almost exclusively prepared by wet chemical routes, which lead to surface-capped nanoparticles. Herein, we present a simple mechanical alloying process to prepare uncapped Zn1−x Cdx S nanocrystals throughout the entire composition range. The resulting nanocrystals have average sizes smaller than 9 nm, are chemically homogenous, and exhibit linear lattice parameter-composition and close-to-linear band-gap-composition relationships. Continuous lattice contraction of the Cd1−x Znx S nanocrystals with the atomic Zn concentration results in a successional enlargement of their band gap energies expanding from the visible region to the ultraviolet (UV) region, demonstrating the ability for precise control of band gap engineering through composition tuning and mechanical alloying.
    Electronic Materials Letters 03/2015; 11(2):187-192. DOI:10.1007/s13391-014-4327-8
  • [Show abstract] [Hide abstract]
    ABSTRACT: Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (ΔVTh≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (ΔVTh = 4.0 V). However, the AZO/ZnO bilayer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2 /V·s for 5 at. % and 1.8 cm2 /V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2 /V·s) due to increased scattering caused by Alrelated impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility(7.8 cm2 /V·s for 14 at. %) and better stability.
    Electronic Materials Letters 03/2015; 11(2):205-212. DOI:10.1007/s13391-014-4305-1
  • [Show abstract] [Hide abstract]
    ABSTRACT: This study examined chip shrink technology for lateral-type AlGaN/GaN HFETs on 150 mm Si substrates fabricated with a bonding pad above the active area (BPAA) structure. The SiO2/polyimide layers were used as inter metal dielectric (IMD) layers, which yielded a very low leakage current of 0.58 nA/mm2 even at 1 kV and a good adhesion property after O2 plasma treatment. The fabricated AlGaN/GaN HFETs with the BPAA structure exhibited good device characteristics, such as a low leakage current of 7.1 nA at 1 kV and a drain current of 3.6 A at 2 V, which has the same value compared to that of the AlGaN/GaN HFETs without the BPAA structure, even though the BPAA structure reduced the size of chip by 40%. This suggests that the BPAA structure is a promising method for reducing the size and cost of the lateral-type AlGaN/GaN HFETs.
    Electronic Materials Letters 03/2015; 11(2):213-216. DOI:10.1007/s13391-014-4298-9
  • [Show abstract] [Hide abstract]
    ABSTRACT: We comparatively investigated the ferroelectric domain structure of BaTiO3 (BTO) and Mn-doped BTO epitaxial thin films grown on Pt/MgO substrates by pulsed laser deposition. The advantages of Mn doping included enhanced ferroelectric polarization, low leakage current, and ferromagnetism. Piezoresponse force microscopy revealed that the increased domain wall energy associated with Mn doping led to an increase in the ferroelectric domain structure.
    Electronic Materials Letters 03/2015; 11(2):232-235. DOI:10.1007/s13391-014-4266-4
  • [Show abstract] [Hide abstract]
    ABSTRACT: A series of Eu3+-doped (Y(1−x)Lax)PO4 phosphors were synthesized using a slow evaporation method increasing molar ratios of La3+ ions in (Y(1−x)Lax)PO4:0.01Eu3+. The crystal structure and photoluminescence (PL) with decay curves of the samples were characterized using X-ray diffraction (XRD) and fluorescence spectroscopy, respectively The PL intensity is higher for the monoclinic than tetragonal structure of the (Y(1−x)Lax)PO4:Eu3+ phosphor. The CIE color coordinates shows that the color purity increases, when the La3+ ions are completely replaced by Y3+ ions.
    Electronic Materials Letters 03/2015; 11(2):303-307. DOI:10.1007/s13391-014-4367-0
  • [Show abstract] [Hide abstract]
    ABSTRACT: An advanced AlGaN/GaN HEMT structure, grown on a sapphire substrate by MOCVD utilizing a high temperature (HT) AlN interlayer (IL) and a multilayer high-low-high temperature (HLH) AlN buffer layer, demonstrates a superior performance both in breakdown voltage (>200 V) and maximum drain current (IDSS = 667 mA/mm). The HT AlN IL produces an additional compressive strain into the above GaN layer. Accordingly, an AlGaN barrier, grown on the more compressive GaN, introduces less tensile strain leading to an improvement in surface morphology (RMS = 0.19 nm in 2 × 2 μm2), a remarkable increase in 2DEG mobility by 46% (μ s = 1900 cm2/Vs) and a decrease in densities of defects acting as paths for the leakage current through the AlGaN barrier. A high semi-insulating buffer is achieved by eliminating leakage paths both through the buffer layer and the buffer-substrate interfacial layer. These result from an increase in unintentional carbon introduced by AlN layers, especially by a low temperature AlN layer; which are grown under low pressure (50 Torr). Lastly, the decrease in AlGaN barrier tensile strain and low leakage current in the advanced HEMTs structure using an HT AlN IL and an HLH AlN buffer are promising for an improvement in AlGaN/GaN HEMTs’ reliability.
    Electronic Materials Letters 03/2015; 11(2):217-224. DOI:10.1007/s13391-014-4219-y
  • [Show abstract] [Hide abstract]
    ABSTRACT: Polypyrrole thin films were prepared by galvanostatic mode of electrodeposition. The applied constant current density changes structural, optical and surface wettability properties of polypyrrole thin films. The prepared films were characterized for structural, optical and surface wettability study. Fourier transform infrared spectroscopy shows the benzoid and qunoid like structures in polypyrrole films. The UV-Visible absorption study shows that the optical density varies with the applied deposition current density. The band gap energy calculated from the Tauc’s plot was found to be 2.25 eV and shows the film is in semiconductor nature. The surface wettability study confirms hydrophilic nature of polypyrrole films.
    Electronic Materials Letters 03/2015; 11(2):266-270. DOI:10.1007/s13391-014-4082-x
  • [Show abstract] [Hide abstract]
    ABSTRACT: During the measurement of the electrical properties of a metal-polymer-metal capacitor, it was found that the capacitor exhibited write-once-read-many-times (WORM) memory behavior, even though it was made of the dielectric polymer, polystyrene. The initial low conductance state changed to a high conductance state when a threshold voltage was applied, but this final state never reverted to the initial state. This phenomenon only appeared in sub-100-nm-thick films. To understand this phenomenon, conductive atomic force microscopy (CAFM) was used. The current distribution measured with CAFM showed an irreversible current path had formed near particles in the polymer film. For reproducibility, particles were intentionally inserted into the polymer film during the fabrication of metal-polymer-metal capacitors, and the same current mechanism was found. From these results, it is concluded that the purification and cleaning process of organic devices severely affects the device characteristics. In addition, particle-insertion appears to be a promising method for fabrication low-cost and air-stable WORM type memory for various applications.
    Electronic Materials Letters 03/2015; 11(2):246-251. DOI:10.1007/s13391-014-4241-0
  • [Show abstract] [Hide abstract]
    ABSTRACT: A series of Sr1−x Tix MnO3−δ (0.05 ≤ x ≤ 0.3) was fabricated by the solid-state reaction method. We studied the structural and thermoelectric properties of Sr1−x Tix MnO3−δ , with respect to the partial substitution of Ti4+ for Sr2+. The sintered Sr1−x Tix MnO3−δ crystallized in the hexagonal perovskite-type structure with a space group of P6 3 /mmc. For x ≤ 0.1, the partial substitution of Ti4+ for Sr2+ led to increases in the electrical conductivity and the absolute value of the Seebeck coefficient, thus enhancing the power factor. The highest power factor (2.5 × 10−5 Wm−1K−2) was obtained for Sr0.9Ti0.1MnO3−δ at 800°C. The partial substitution of Ti4+ for Sr2+ in SrMnO3−δ led to a significant improvement in the thermoelectric properties.
    Electronic Materials Letters 03/2015; 11(2):276-281. DOI:10.1007/s13391-014-4237-9
  • Electronic Materials Letters 03/2015; 11(2):252-258. DOI:10.1007/s13391-014-4290-4