Superlattices and Microstructures (Superlattice Microst)

Publisher: Elsevier

Journal description

An Interdisciplinary Journal on the Science and Technology of Nanostructures. Superlattices and Microstructures is a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces. The last decade has seen rapid developments in the fabrication, characterization and conceptual understanding of synthetic microstructures in many different material systems including silicon, III-V and II-VI semiconductors, metals, ceramics and organics. The objective of this journal is to provide a common interdisciplinary platform for the publication of the latest research results on all such"nanostructures" with dimensions in the range of 1 - 100 nm; the unifying theme here being the dimensions of these artificial structures rather than the material system in which they are fabricated.

Current impact factor: 1.98

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 1.979
2012 Impact Factor 1.564
2011 Impact Factor 1.487
2010 Impact Factor 1.091
2009 Impact Factor 0.91
2008 Impact Factor 1.211
2007 Impact Factor 1.344
2006 Impact Factor 1.259
2005 Impact Factor 0.702
2004 Impact Factor 0.431
2003 Impact Factor 0.604
2002 Impact Factor 0.876
2001 Impact Factor 0.859
2000 Impact Factor 0.635
1999 Impact Factor 0.649
1998 Impact Factor 0.831
1997 Impact Factor 0.694
1996 Impact Factor 0.928
1995 Impact Factor 0.613
1994 Impact Factor 0.76
1993 Impact Factor 0.771
1992 Impact Factor 0.912

Impact factor over time

Impact factor
Year

Additional details

5-year impact 1.30
Cited half-life 5.40
Immediacy index 0.28
Eigenfactor 0.01
Article influence 0.34
Website Superlattices and Microstructures website
Other titles Superlattices and microstructures (Online), Superlattices and microstructures
ISSN 1096-3677
OCLC 36952870
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

Elsevier

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Pre-print allowed on any website or open access repository
    • Voluntary deposit by author of authors post-print allowed on authors' personal website, arXiv.org or institutions open scholarly website including Institutional Repository, without embargo, where there is not a policy or mandate
    • Deposit due to Funding Body, Institutional and Governmental policy or mandate only allowed where separate agreement between repository and the publisher exists.
    • Permitted deposit due to Funding Body, Institutional and Governmental policy or mandate, may be required to comply with embargo periods of 12 months to 48 months .
    • Set statement to accompany deposit
    • Published source must be acknowledged
    • Must link to journal home page or articles' DOI
    • Publisher's version/PDF cannot be used
    • Articles in some journals can be made Open Access on payment of additional charge
    • NIH Authors articles will be submitted to PubMed Central after 12 months
    • Publisher last contacted on 18/10/2013
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively.
    Superlattices and Microstructures 08/2015; 84. DOI:10.1016/j.spmi.2015.03.067
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    ABSTRACT: In this paper a charge controlled analytical model is developed to predict quantum capacitance, threshold voltage and drain current for normally-off AlN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT). The oxide/semiconductor interface Density of State (DOS) dependent model for two dimensional electron gas (2DEG) density is obtained by demonstrating necessary energy band diagrams. Quantum capacitance in the channel and threshold voltage is obtained by using different boundary conditions. By using these expressions the drain currents in both linear and saturation mode are derived. It is interesting to note that a positive threshold voltage necessary for normally-off operation can be obtained by decreasing the AlN barrier thickness below a critical value. The predicted DC characteristics are in good agreement with the experimental results, thus it confirms the validity of the proposed model.
    Superlattices and Microstructures 08/2015; 84. DOI:10.1016/j.spmi.2015.04.025
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    ABSTRACT: The field emission property of cold cathode emitters utilizing the ZnO nanowires with various conditions prepared by ultrasonic spray pyrolysis technique was discussed. It is found that the emission current was enhanced in the emitters having higher aspect ratio as well as smaller sheet resistance. Applying of post-annealing process, utilization of additional Mo back electrode in the cathode, and coating of Mo on the ZnO nanowires resulted in the improvement of the emission current and lowering the threshold voltage. A threshold voltage of about 5.5 V/μm to obtain 1.0 μA/cm2 was achieved in the sample prepared at the growth temperatures varying continuously from 250 °C to 300 °C.
    Superlattices and Microstructures 08/2015; 84. DOI:10.1016/j.spmi.2015.05.003
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    ABSTRACT: The uniform and regular hierarchical flower-like ZnO nanostructures assembled by nanosheets have been controllably synthesized by a facile and efficient solution route on a large scale without using any templates, substrate or seed layers. The results of the experiment indicated that reaction temperature, time and the molar ratio of Zn2+/OH− had a strong influence on the formation of the hierarchical flower-like ZnO nanostructures. ZnO with flower-like nanostructures can be controllable synthesized with appropriate temperature, time and the molar ratio of Zn2+/OH−. The optical properties of the as-synthesized ZnO were investigated by UV–Vis absorption and photoluminescence. Consequently, the value of the band gap for this kind of ZnO crystals was calculated to be 3.26 eV and the ZnO nanostructures possess a relatively strong UV emission, violet emission and a blue emission. Moreover, The ZnO may be tempting for further application such as photocatalyst, gas sensors and UV lasers. The facile and efficient solution route has high potentials to synthesize ZnO crystals on a large scale for industry application.
    Superlattices and Microstructures 08/2015; 84. DOI:10.1016/j.spmi.2015.03.068
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    ABSTRACT: The present work is dedicated to simulate the band edges of AlInN/AlN/GaN high electron mobility transistors. In a second step, we have developed a model for the electron mobility by taking into account the predominant mechanisms. The confinement of subbands in the channel quantum well has also been accounted for in calculating the electron mobility. Obtained results have been used to calculate self-consistently the direct-current characteristics of AlInN/AlN/GaN HEMTs. As has been found, the drain current strongly depends on the electron band parameters. More especially, a drastic improvement in the electron transport is expected to be achieved by optimizing the deposited epilayers in terms of thicknesses and alloy composition. Based on an experimental support, the electronic model adopted is improved by including the effects of deep electron traps. As also shown, the AlInN/AlN/GaN HEMTs exhibit a self-heating. From the relevant direct current measurements, we have deduced the drain voltage-dependent temperature in the conductive channel.
    Superlattices and Microstructures 08/2015; 84. DOI:10.1016/j.spmi.2015.04.036
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    ABSTRACT: In this paper we have investigated the structural, electronic and thermodynamic properties of tin oxide (SnO2) using the full-potential linearized augmented plane wave method (FP-LAPW) within the framework of density functional theory (DFT) as implemented in the Wien2k package within the generalized gradient approximation (GGA) and GGA plus trans-blaha-modified Becke–Johnson (TB-mBJ) as the exchange correlation. From the electronic properties, SnO2 has a direct band gap in (Γ–Γ) direction with a value of 2.86 eV. The quasi-harmonic Debye model, using a set of total energy versus volume calculations is applied to study the thermal and vibrational effects. Temperature and pressure effects on the structural parameters, such as thermal expansion, heat capacities and Debye temperature are investigated from the non-equilibrium Gibbs function.
    Superlattices and Microstructures 08/2015; 84. DOI:10.1016/j.spmi.2015.02.046
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    ABSTRACT: High electron mobility transistor (HEMT) made of CNT channel with magnetic tunnel junctions inserted on both the sides of the channel region before source and drain region is analysed in this paper. The conductivity of the proposed superlattice structure with magnetic tunnel junction is very good when compared to superlattice structure without the magnetic tunnel junction. When fabricated as a HEMT the device will serve exceedingly well for various applications in electronics.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.02.042
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    ABSTRACT: Fluorine-doped zinc oxide (FZO) thin films were prepared on glass substrates at room temperature by radio frequency (RF) magnetron sputtering with a ceramic ZnO target containing 1.5 wt% zinc fluoride (ZnF2). This study investigates the influences of RF powers of sputtering and H2 plasma treatment on properties of FZO films. For as-deposited films, all films had a highly (0 0 2) preferential c-axis orientation and film crystallinity was improved with increasing deposition power. The film resistivity decreased and the average optical transmittance in the visible range increased with increasing deposition power. The lowest resistivity of 9.29 × 10−4 Ω-cm and the average transmittance above 90% were obtained at the power of 150 W. For plasma treated films, the crystal structure had no significant change but the film resistivity further decreased to 7.92 × 10−4 Ω-cm and the optical bandgap increased to 3.725 eV. The calculated figures of merit exhibited that the film deposited with a high deposition power and a low H2 plasma power possessed the optimized optoelectronic properties. The H2 plasma treated FZO thin films have potential to be applied as transparent conducting electrodes.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.03.034
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    ABSTRACT: We have investigated optical properties of one-dimensional (1D) photonic crystals (PC) composed of alternating layers of a right hand material (RHM) and a left hand material (LHM). The RHM dielectric function is frequency independent and the LHM (metamaterial) dielectric function and magnetic susceptibility are described according to the Drude model. P- or S polarized electromagnetic waves are considered to shine onto the 1D PC in the attenuated total reflectivity geometry to explore the coupling of light with the plasmons at the surfaces of the metamaterial layers. The metamaterial surface supports plasmons which in the single layer structure couple to form the symmetric and antisymmetric modes. These surface plasmons form a bulk mode in the multilayer system. The presence of a defect, which is obtained by varying the right hand layer thickness, at the middle of the layer structure, shows interesting features; the amplitude of the electric field at the defect site is enhanced and highly localized.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.03.009
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    ABSTRACT: We design a novel GeSn-based heterojunction-enhanced p-channel tunneling field-effect transistor (HE-PTFET) with a Ge0.92Sn0.08/Ge heterojunction located in channel region, at a distance of LT–H from the Ge0.92Sn0.08 source-channel tunneling junction (TJ). HE-PTFETs demonstrate the negative shift of onset voltage VONSET, the steeper subthreshold swing S, and the improved on-state current ION compared to Ge0.92Sn0.08 homo-PTFET. At low VGS, the suppression of BTBT due to the widening of the tunneling barrier caused by the heterojunction leads to a negative shift of VONSET in HE-PTFETs. At high VGS, ION enhancement in HE-PTFETs is achieved over the homo device, which is attributed to the confinement of BTBT in Ge0.92Sn0.08 source-channel TJ region by the heterojunction, where the short tunneling paths lead to a high tunneling probability. Due to the steeper average S, HE-PTFET with a 6 nm LT–H achieves a 4 times higher ION compared to homo device at a VDD of −0.3 V.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.03.030
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    ABSTRACT: Current density in superlattice placed in quantizing electric field and in high-frequency field of electromagnetic wave was calculated. The calculations were performed by taking into account an inelastic scattering of charge carriers by phonons. Possibility of the effect of absolute negative conductivity, i.e. the effect of appearance of electric current flowing in opposite direction than that of vector of quantizing electric field intensity, was shown. Such effect in graphene superlattices was discussed.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.03.041
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    ABSTRACT: In this paper, three dimensional (3D) analytical model for subthreshold characteristics of doped FinFET has been presented. The separation of variables technique is used to solve the 3D Poisson’s equation analytically with appropriate boundary conditions so as to obtain the expression for channel potential. The thus obtained potential distribution function has been employed in deriving subthreshold current and subthreshold slope model. The channel potential characteristics have been studied as a function of various device parameters such as gate length, gate oxide thickness and channel doping. The proposed analytical model results have been validated by comparing with the simulation data obtained by the 3D device simulator ATLAS™ from Silvaco.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.03.048
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    ABSTRACT: Nanostructure thin film of InSe deposited on p-Si single crystal to fabricate n-InSe/p-Si heterojunction. Electrical and photoelectrical have been studied by the current density–voltage (J–V). The fabricated cell exhibited rectifying characteristics. Analyzing the results of dark forward J–V shows that there are differrent conduction mechanisms. At low voltages, the current density is controlled by a Schottky emission mechanism. While at a relatively high voltage, a space charge-limited-conduction mechanism is observed with a single trap level. The cell also exhibited a photovoltaic characteristic with a power conversion efficiency of 3.42%. Moreover, artificial neural networks (ANNs) are adopted to model the J–V through the obtained functions. Different network configurations and many runs were trying to achieve good performance and finally obtained the current density, J, as a function of the junction temperature, T, and applied voltage, V. In all cases studied, we compared our obtained functions produced by the ANN technique with the corresponding experimental data and the excellent matching was so clear.
    Superlattices and Microstructures 07/2015; 83. DOI:10.1016/j.spmi.2015.03.033