Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society (J VAC SCI TECHNOL B)

Publisher: American Vacuum Society, American Institute of Physics

Journal description

The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles. The JVST B has been established to provide a vehicle for the publication of research dealing with microelectronics and nanometer structures. The emphasis will be on processing, measurement and phenomena, and will include vacuum processing, plasma processing, materials and structural characterization, microlithography, and the physics and chemistry of submicron and nanometer structures and devices. The journal also publishes papers from conferences and symposia that are sponsored by the AVS and its Divisions. JVST B is published six times annually (Jan/Feb, Mar/Apr, May/Jun, Jul/Aug, Sep/Oct, Nov/Dec).

Current impact factor: 1.36

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 1.358
2012 Impact Factor 1.267
2011 Impact Factor 1.341
2010 Impact Factor 1.268
2009 Impact Factor 1.46
2008 Impact Factor 1.445
2007 Impact Factor 1.419
2006 Impact Factor 1.597
2005 Impact Factor 1.626
2004 Impact Factor 1.664
2003 Impact Factor 1.6
2002 Impact Factor 1.61
2001 Impact Factor 1.549
2000 Impact Factor 1.605
1999 Impact Factor 1.687
1998 Impact Factor 1.662
1997 Impact Factor 1.591
1996 Impact Factor 1.897
1995 Impact Factor 1.556
1994 Impact Factor 1.704
1993 Impact Factor 2.359
1992 Impact Factor 2.27

Impact factor over time

Impact factor
Year

Additional details

5-year impact 1.29
Cited half-life 8.80
Immediacy index 0.27
Eigenfactor 0.02
Article influence 0.44
Website Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures website
Other titles Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, Microelectronics and nanometer structures, Journal of vacuum science and technology., JVST B
ISSN 1071-1023
OCLC 23276603
Material type Periodical
Document type Journal / Magazine / Newspaper

Publisher details

American Institute of Physics

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Publishers version/PDF may be used on author's personal website or institutional website
    • Authors own version of final article on e-print servers
    • Must link to publisher version or journal home page
    • Publisher copyright and source must be acknowledged
    • NIH-funded articles are automatically deposited with PubMed Central with open access after 12 months
    • For Medical Physics see AAPM policy
    • This policy does not apply to Physics Today
    • Publisher last contacted on 27/09/2013
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: In this study, the authors characterized field emission for stacked-double-gate all-metal field emitter arrays (FEAs) consisting of 40 000 nanotips. After careful conditioning of the FEAs under ultrahigh vacuum and in low-pressure neon gas ambient, the authors were able to produce a highly collimated beam with a current of ~50 µA which showed an improved beam homogeneity. The beam rms radius reduced by a factor 10 and the transverse energy spread was reduced to well below 1 eV.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 04/2015; 33(3):03C113. DOI:10.1116/1.4916091
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    ABSTRACT: Recently, sub-wavelength-pitch stacked double-gate metal nanotip arrays have been proposed to realize high current, high brightness electron bunches for ultrabright cathodes for x-ray free-electron laser applications. With the proposed device structure, ultrafast field emission of photoexcited electrons is efficiently driven by vertical incident near infrared laser pulses, via near field coupling of the surface plasmon polariton resonance of the gate electrodes with the nanotip apex. In this work, in order to gain insight in the underlying physical processes, the authors report detailed numerical studies of the proposed device. The results indicate the importance of the interaction of the double-layer surface plasmon polariton, the position of the nanotip, as well as the incident angle of the near infrared laser pulses.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 03/2015; 33(3):03C112. DOI:10.1116/1.4915252
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    ABSTRACT: Here, the authors report the field emission investigations of silicon nanotubes (SiNTs) synthesized by vapor phase condensation method in DC arc plasma reactor. The SiNTs have diameters in the range of 10–15 nm and length of a few 100 nm. A maximum current density of 4.2 mA/cm2 has been attained. The turn on field, defined for obtaining a current density of 10 μA/cm2, is found to be 1.9 V/μm. The specimen exhibits a good emission current stability at 1 μA over a period of 3 h. The field enhancement factor, β, is estimated to be ∼5534. The current stability is quantified in terms of standard deviation and its magnitude has been measured to be only 9.7% with respect to the average value.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 03/2015; 33(2):021806. DOI:10.1116/1.4914959
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    ABSTRACT: The authors study the electrical transport properties of atomically thin individual crystalline grains of MoS2 with four-probe scanning tunneling microscopy. The monolayer MoS2 domains are synthesized by chemical vapor deposition on SiO2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carrier density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS2. Our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS2.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 03/2015; 33(2):02B110. DOI:10.1116/1.4906331
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    ABSTRACT: The authors report on thin-film processing improvements in the fabrication of superconducting quasiparticle-trap-assisted electrothermal-feedback transition-edge sensors used in the design of cryogenic dark matter search detectors. The work was performed as part of a detector upgrade project that included optimization of a new confocal sputtering system and development of etch recipes compatible with patterning 40 nm-thick, alpha-beta mixed-phase W films deposited on 300-600 nm-thick, patterned Al. The authors found that their standard exothermic Al wet etch recipes provided inadequate W/Al interfaces and led to poor device performance. The authors developed a modified Al wet-etch recipe that effectively mitigates geometrical step-coverage limitations while maintaining their existing device design. Data presented here include scanning electron microscope and focused ion beam images of films and device interfaces obtained with the new Al etch method. The authors also introduce a method for quantitatively measuring the energy collection efficiency through these interfaces. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4904422
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    ABSTRACT: Well-aligned multiwalled carbon nanotubes (MWCNTs) were synthesized from a cyclopentadienyliron dicarbonyl dimer precursor using chemical vapor deposition and were systematically characterized over a variety of growth conditions. The injection volume of the precursor was found to affect both the MWCNT diameter distribution and the amount of residual iron catalyst found in the sample. Low injection volumes produced relatively low impurity samples. Synthesized materials contained as little as 2.47% catalyst impurity by weight and were grown without predeposition of catalyst materials onto the substrate, reducing the need for damaging purification processes necessary to remove the substrate. Scanning electron microscopy was used to investigate catalyst contamination, synthesized MWCNT diameters, and growth morphology. Additionally, transmission electron microscopy was employed to qualitatively examine nanotube wall formation and sidewall defects. Longer growth times resulted in a higher quality product. Raman spectroscopy was used in conjunction with thermogravimetric analysis to confirm sample quality. The relative efficacy of the precursor and material quality are evaluated. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4904743
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    ABSTRACT: Plasma-assisted Ag and Au subtractive etching was investigated in CH4 plasmas at 10 degrees C. The etch rate of Ag (2962 nm/min) was higher than that observed for Cu (17 nm/min), while the Au etch rate (12 nm/min) was lower than that for both Ag and Cu. Etch rates of Ag and Au due to pressure variation decreased as pressure increased, analogous to Cu etch results. However, the specific plasma conditions under which hydrocarbon formation occurred on Cu, Ag, and Au depended upon the metal being etched as a result of variation in surface chemical reactivities. Comparison of etch results using glass slides and Si wafers as etch masks, confirmed the formation of volatile etch products for Cu and Au. Etch product removal for Au and Cu was enhanced by UV photons, while Ag etching showed no effect at wavelengths > 300 nm. These studies demonstrated that in CH4 plasmas, chemical components in the etch process are most important for Cu while Ag and Au etching is more dependent upon physical sputtering. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4902332
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    ABSTRACT: Improvements in field emission (FE) of graphene sheets were demonstrated by radio frequency magnetron sputtering with magnesium oxide (MgO). Following MgO coating, the turn-on field of graphene sheets is decreased from 6.3 to 3.8 V/mu m, and the threshold field is decreased from 9 to 6.5 V/mu m. The deposited MgO nanoparticles not only decrease the turn-on field but also enhance the tolerance ability of graphene sheets to various pressure conditions. Field emission stability measurements indicated better lifetime and field emission stability for MgO-coated graphene emitter. Meanwhile, atomic force microscopy, scanning electron microscopy, transmission electron microscope, and x-ray photoelectron spectroscopy were used to analyze the influence of MgO. This study presents an effective method of depositing wide-bandgap oxides on graphene emitters to improve the FE properties of graphene. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4905094
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    ABSTRACT: Lithium niobate is treated with argon ion beam irradiation of varying energy, resulting in a homogeneously damaged surface layer. This layer is subsequently etched with potassium hydroxide (KOH), and etch rates are recorded for different experimental conditions such as varying temperature and concentration of the water-based KOH solution. The dependence of the etch rate upon the normalized fluence of the ion irradiation shows good selectivity, which makes the effect useful for nano- and microfabrication. Ultimately, photonic crystals and gratings are fabricated by KOH-assisted ion beam-enhanced etching to prove the potential of this method for applications in functional nano-and micro-optics. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4902087
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    ABSTRACT: The authors present the design of a modular sample holder that offers the possibility of in situ fabrication of metallic nanostructures under ultrahigh vacuum. One of the crucial points is to bridge the gap between the macroscopic leads and the nanostructure itself. This problem is solved by using a set of two different masks. For a precise alignment of the two masks, a magnetic tripod connection system has been developed. With this new system, an alignment precision of 26 lm is obtained. As a result of the fabrication in ultrahigh vacuum, the nanostructures will be accessible to scanning probe techniques without surface contamination. First results show that electrical measurements are indeed possible.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1):013201. DOI:10.1116/1.4905092
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    ABSTRACT: Atomic layer deposition-grown Al2O3 thin films are grown on n-type GaN and annealed at 300 or 500 degrees C in various atmospheres. Metal-insulator-semiconductor capacitors (MISCAPs) are used as simplified test structures for AlGaN/GaN heterostructure field effect transistors with an Al2O3 gate dielectric. Electrical characterization of the unannealed MISCAPs reveals a low leakage current density of similar to 1.4 x 10(-9) A/cm(2) at -2MV/cm. Annealing at 500 degrees C in N-2 or a forming gas results in a degradation of this leakage level by more than one order of magnitude, whereas the leakage current of the Al2O3 films annealed at 500 degrees C in O-2 is increased to similar to 5.2 x 10(-9) A/cm(2) at -2MV/cm. The photoassisted capacitance-voltage technique, the conductance method, and border trap analysis are used to study the influence of the annealing ambient atmosphere upon the Al2O3/GaN interface. For all atmospheres, thermal treatments at 500 degrees C marginally affects the border oxide trap density, but the forming gas anneal at 500 degrees C passivates the interface traps most efficiently. While the O-2 thermal treatment reduces the interface trap density in the Al2O3/GaN system, the N-2 anneal creates interface trap states, indicating the formation of an oxygen deficient defect level at the Al2O3/GaN interface during N-2 annealing. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4904968
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    ABSTRACT: In this study, NiN-based resistive switching (RS) random access memory was doped with various concentrations of oxygen, and its uniform set/reset operation and current levels were examined. As compared with undoped RS layers, RS layers deposited with an oxygen flow rate of 5 sccm were more uniform and exhibited higher on/off ratios by forming oxy-nitride. In contrast, RS layers deposited with oxygen flow rates less than 5 sccm showed poor performance due to oxygen acting as a defect. The authors demonstrated that the oxygen doping process can improve the RS characteristics of NiN films and help clarify the RS phenomena associated with these films. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4904209
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    ABSTRACT: The asymmetrical degradation behaviors of amorphous indium-gallium-zinc oxide thin-film transistors are studied comprehensively under various gate and drain bias stresses. The transfer curve moves to the negative direction after bias stresses are applied, and different types of asymmetrical degradation are observed depending upon the magnitude of the applied gate and drain bias stresses. After the application of gate-to-source (V-GS) and drain-to-source (V-DS) bias stresses of (V-GS = 16 V, V-DS = 16 V) and (V-GS = 22 V, V-DS = 10 V), the forward mode transfer curve exhibits a more negative shift compared to that of the reverse mode, whereas opposite results are observed under the stress condition of (V-GS = 10 V, V-DS = 25 V). From the two-dimensional simulation results and the separately extracted subgap density of states in the source and drain sides of the thin film transistors before and after the application of various bias stresses, the local high electric field-induced nonuniform generation rate of the subgap states near the conduction band edge is considered to be the dominant mechanism causing the asymmetrical degradation of the devices under various gate and drain bias stresses. The generation of the subgap states is observed at different locations depending upon the magnitude of the applied gate and drain bias stresses. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4903527
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    ABSTRACT: Millisecond anneal techniques have been demonstrated to achieve fully recrystallized, highly activated, shallow, and abrupt junctions in silicon with both p-and n-type dopants due to the technique's fast time scale and high temperature. To understand and model the effects of millisecond laser annealing, knowledge of the true thermal profile experienced by the active semiconductor region must be known. This work simulates the impacts of a scanning laser in a series of shallow implants, and compares those results to experimental results. Arsenic ion (As+) implant energies of 10, 19, and 25 keV at doses of 1.5 x 10(15) and 3 x 10(15) cm(-2) into a silicon-on-insulator substrate are studied to achieve different doping levels and amorphization depths. The recrystallization, activation, and mobility of the laser annealed, ion implanted experimental cells are then analyzed. For each experiment, Sentaurus technology computer aided design is used to create a calibrated 2D laser model to approximate the thermal budget of the lasing recipes (850-1250 degrees C) then using that output as an input into lattice kinetic Monte Carlo (LKMC) to simulate the solid phase epitaxial regrowth (SPER) during anneal of the various implant conditions. Sheet resistance and Hall effect measurements were used to correlate dopant activation and mobility with the regrowth process during laser anneal, showing the onset of high conductivity associated with completion of SPER in the films. The LKMC model shows an excellent agreement with cross section transmission electron microscopy, correlating the increase of conductivity with completion of crystal regrowth, increased activation, and crystal quality at various temperatures. Shallow, lower dose implants are capable of single crystal regrowth, producing high levels of activation >1 x 10(20) cm(-2) and nominal mobilities for highly arsenic-doped silicon. However, higher energy implants that fully amorphize the film regrow polycrystalline silicon with low mobilities even at very high temperatures (1250 degrees C), unsuitable for source-drain formation in logic devices. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4902020
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    ABSTRACT: In this study, the authors present a detailed procedure for the quantitative measurement of the field emission properties of a large number of vertically aligned carbon nanotubes/nanofibers (CNs) using a scanning anode field emission microscope (SAFEM). This method provides the statistical distribution of all the relevant emitter parameters such as field enhancement factor, emitter height, and maximal current before failure. In order to extract the correct absolute enhancement factor of each CN, an analytical electrostatics model has been developed taking into account for the "tip-to-tip" geometry of anode and cathode in the SAFEM set-up. This analytical model has been validated by finite elements electrostatic simulations. Experimental measurements of enhancement factor distributions determined at several anode-cathode distances show the importance of this procedure to obtain quantitative correct values. A good correlation between the enhancement factor and the CN length has been observed. Additionally, the correlation between the maximum current before failure and the enhancement factor has also been investigated. Unlike in previously reported experiments, no clear dependence between these two parameters has been obtained. This result can be explained in our case by a large dispersion of CN crystalline quality or CN-substrate electrical contact resistance in the array used in this study. (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4902019
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    ABSTRACT: The current-voltage (I-V) characteristics of Pt/HfO2(5 nm)/TiN resistive switching structures are modeled using an equivalent electric circuit which consists of two antiparallel diodes in combination with a single series resistance, the only difference between the diodes being the threshold functions used to simulate the set and reset events. The switching process is achieved by means of a mathematical entity called the logistic hysteron, which governs the model parameters. The authors show that the model is able to capture the shape of the I-V curves both for positive and negative biases obtained under different current compliance limits for the set process ranging from 0.5 to 10 mA. In order to demonstrate the feasibility of the proposed approach, experimental and model results for the I-V curves are plotted using alternative representations: linear-linear, log-linear, and log-log axis. The role played by the series resistance is discussed in terms of the normalized differential conductance d ln(I)/d ln(V). (C) 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2015; 33(1). DOI:10.1116/1.4900599