Radiation Effects and Defects in Solids (RADIAT EFF DEFECT S)

Publisher: Taylor & Francis

Journal description

Experimental and theoretical papers of both a fundamental and applied nature that contribute to the understanding of either phenomena induced by the interaction of radiation with condensed matter or defects in solids introduced not only by radiation but also by other processes are published in three groups. Section A: Radiation Effects - Suitable topics include, but are not limited to, atomic collisions, radiation induced atomic and molecular processes in solids, the stopping and range of ions and radiation damage, sputtering and mixing in solids, radiation-induced transport phenomena and the role of defects and impurities introduced by radiation. Papers on ion implantation in metals and semiconductors; radiation effects in insulators, biomatter, superconductors, fusion and fission devices and space research; as well as fission tracks, isotope dating, ion beam analytic techniques and applications of ion irradiation and ion tracks are also welcome. Section B: Crystal Lattice Defects and Amorphous Materials ÷ Topics covered include atomic and electronic properties of defects, the influence of defects on lattice properties and processes, the lattice-defect approach to solid state reactions such as clustering, precipitation, laser annealing and the role of impurities, the defect dynamics in a non-steady state such as under particle or electromagnetic irradiation or during a rapid temperature change and problems associated with the metastable nature of amorphous materials. NEW Section C: Biological Applications ÷ Contributions from the fields of fundamental and applied radiobiology are invited for our new Biological Applications Section. Topics will include tumour radio-therapy and fundamental research in radiative cell degeneration.

Current impact factor: 0.60

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 0.603
2012 Impact Factor 0.502
2011 Impact Factor 0.404
2010 Impact Factor 0.66
2009 Impact Factor 0.55
2008 Impact Factor 0.415
2007 Impact Factor 0.303
2006 Impact Factor 0.497
2005 Impact Factor 0.353
2004 Impact Factor 0.403
2003 Impact Factor 0.407
2002 Impact Factor 0.29
2001 Impact Factor 0.38
2000 Impact Factor 0.264
1999 Impact Factor 0.444
1997 Impact Factor 0.249
1996 Impact Factor 0.291
1995 Impact Factor 0.58
1994 Impact Factor 0.582
1993 Impact Factor 0.29
1992 Impact Factor 0.239

Impact factor over time

Impact factor
Year

Additional details

5-year impact 0.50
Cited half-life 0.00
Immediacy index 0.09
Eigenfactor 0.00
Article influence 0.17
Website Radiation Effects and Defects in Solids website
Other titles Radiation effects and defects in solids (Online)
ISSN 1042-0150
OCLC 51533049
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

Taylor & Francis

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    • Author can archive a pre-print version
  • Post-print
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    • On author's personal website or departmental website immediately
    • On institutional repository or subject-based repository after either 12 months embargo
    • Publisher's version/PDF cannot be used
    • On a non-profit server
    • Published source must be acknowledged
    • Must link to publisher version
    • Set statements to accompany deposits (see policy)
    • The publisher will deposit in on behalf of authors to a designated institutional repository including PubMed Central, where a deposit agreement exists with the repository
    • STM: Science, Technology and Medicine
    • Publisher last contacted on 25/03/2014
    • This policy is an exception to the default policies of 'Taylor & Francis'
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: New halophosphor K3Ca2(SO4)3F activated by Eu and Ce has been synthesized by a co-precipitation method and characterized according to its thermoluminescence. The formation of traps in rare earth doped K3Ca2(SO4)3F and the effects of γ-radiation dose on the glow curve are discussed. The glow curve of K3Ca2(SO4)3F:Ce shows a prominent single peak at 150°C, whereas K3Ca2(SO4)3F:Eu and K3Ca2(SO4)3F:Ce,Eu at 142°C and 192°C, respectively. A single glow peak indicates that there is only one set of trap being activated within the particular temperature range. The presented phosphors are also studied because of its fading, reusability and trapping parameters. There was just 2% fading during a period of 10 days, indicating no serious fading problem. Trapping parameters such as order of kinetics (b), activation energy (E) and frequency factor (S) were calculated by using Chen's half-width method. The observations presented in this paper are good for lamp phosphors as well as solid-state dosimeter.
    Radiation Effects and Defects in Solids 05/2015; DOI:10.1080/10420150.2015.1036424
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    ABSTRACT: The spin-Hamiltonian parameters (g factors g//, , and hyperfine structure constants A//, ) of the tetragonally compressed Nb4+ center in cubic Cs2ZrCl6 crystal are calculated from two theoretical methods: one is the complete diagonalization (of energy matrix) method and another is the perturbation theory method. Both methods are based on the two-spin-orbit-parameter model where the contributions to spin-Hamiltonian parameters from the spin-orbit parameter of central dn ion (in the conventional crystal field theory) and that of ligand ion via covalence effect are contained. The calculated results from the two methods are in reasonable agreement with the experimental values. The tetragonal distortion of (NbCl6)2− octahedral cluster due to the Jahn-Teller effect for Nb4+ at the cubic Zr4+ site in Cs2ZrCl6 is also acquired. The results are discussed.
    Radiation Effects and Defects in Solids 05/2015; DOI:10.1080/10420150.2015.1038713
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    ABSTRACT: Thermally stimulated luminescence as well as optical absorption and emission spectra have been studied in LiF crystals irradiated in a reactor at different temperatures. It was shown that aggregate colour centres give rise to thermally stimulated luminescence peaks registered below 450°C. Peak at 470°C is observed only in crystals that have been irradiated at standard temperature of the reactor experimental channels. The peak is caused by interaction of dislocations and F centres.
    Radiation Effects and Defects in Solids 05/2015; DOI:10.1080/10420150.2015.1036425
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    ABSTRACT: In this study, we applied the iterative reconstruction technique to improve image quality (I-dose) and evaluated its usability by analyzing the quality of the resulting image and evaluating the dose. To perform the scans, we fixed the uniform module (CTP 486's section) 4 on the table of the computed tomography (CT) device with the American association of physicists in medicine (AAPM) phantom and located it in the center where the X-rays could be generated by using a razor beam. Then, we set up the conditions of 120 kilovoltage peak (kVp), 150 milliampere second (mAs), collimation 4 × 0.625 mm, and a standard YA (Y-Sharp) filter. Next, we formed two groups: Group A in which I-dose was not applied and Group B in which I-dose was applied. According to the rod in the middle, after fixing the location of (A) at 12 o'clock, (B) at 3 o'clock, (C) at 6 o'clock, and (D) at 9 o'clock to evaluate the image quality, the CT number was measured and the noise level was analyzed. Using the AAPM phantom with doses of 50, 100, 200, 250, and 300 mAs by 80, 100, and 120 kVp, a dose analysis was performed. After scanning, the CT numbers and noise level were measured 20 times as a function of the I-dose levels (1-7View all references). After applying I-dose at 6, 9, 12, and 3 o'clock, when a higher I-dose was applied, a lower noise level was measured. As a result, it was found that when applying I-dose to the AAPM phantom, the higher the level of I-dose, the lower the level of noise. When applying I-dose, the dose can be reduced by 60%. When I-dose is applied when taking CT scans in a clinical study, it is possible to lower the dose and lower the noise level.
    Radiation Effects and Defects in Solids 05/2015; DOI:10.1080/10420150.2015.1038714
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    ABSTRACT: Irradiation of solids with energetic particles, such as electrons or ions, normally gives rise to the formation of atomic defects in the target and changes the material's properties. However, inspite of the damage, irradiation may overall have a beneficial effect on the target. In the present study, Mn-doped ZnS nanocrystals have been synthesized using an aqueous solution method and irradiated by a C6+ (80 MeV) ion beam at fluence (1 × 1013 ions/cm2). A photoluminescence study has been carried on in a ZnS:Mn system, which results in emission peaks corresponding to surface states and Mn2+ emission, confirming that optical luminescence in semiconductor nanocrystals can be tuned using impurity concentration as well as swift heavy ion irradiation between nanocrystals band gap and the bulk band gap values.
    Radiation Effects and Defects in Solids 05/2015; DOI:10.1080/10420150.2014.983106
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    ABSTRACT: It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2 ×1016 Ar/cm2 and 2.5 ×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.
    Radiation Effects and Defects in Solids 05/2015; DOI:10.1080/10420150.2015.1039534
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    ABSTRACT: The stabilization of a two-dimensional fluid jet from the Kelvin-Helmholtz (KH) instability by an external parallel magnetic field is examined by lattice Boltzmann techniques. For sufficiently strong magnetic fields, the jet does not break up into large-scale vortices but retains the major features of the jet, albeit somewhat expanded. There are time-dependent striations within the expanded jet.
    Radiation Effects and Defects in Solids 04/2015; DOI:10.1080/10420150.2015.1025783
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    ABSTRACT: The spectra from laser-produced plasma have been simulated by the newly developed model. The simulation agrees well with the experimental results, which can prove that the K-shell model is suitable for the application of the spectrum from laser-produced plasma. Also, the jkl satellite lines were found important for predicting the spectra.
    Radiation Effects and Defects in Solids 04/2015; DOI:10.1080/10420150.2015.1018262
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    ABSTRACT: The effect of fluence and pulse duration on the growth of nanostructures on chromium (Cr) surfaces has been investigated upon irradiation of femtosecond (fs) laser pulses in a liquid confined environment of ethanol. In order to explore the effect of fluence, targets were exposed to 1000 pulses at various peak fluences ranging from 4.7 to 11.8 J cm-2 for pulse duration of ∼25 fs. In order to explore the effect of pulse duration, targets were exposed to fs laser pulses of various pulse durations ranging from 25 to 100 fs, for a constant fluence of 11.8 J cm-2. Surface morphology and structural transformations have been analyzed by scanning electron microscopy and Raman spectroscopy, respectively. After laser irradiation, disordered sputtered surface with intense melting and cracking is obtained at the central ablated areas, which are augmented with increasing laser fluence due to enhanced thermal effects. At the peripheral ablated areas, where local fluence is approximately in the range of 1.4-4 mJ cm-2, very well-defined laser-induced periodic surface structures (LIPSS) with periodicity ranging from 270 to 370 nm along with dot-like structures are formed. As far as the pulse duration is concerned, a significant effect on the surface modification of Cr has been revealed. In the central ablated areas, for the shortest pulse duration (25 fs), only melting has been observed. However, LIPSS with dot-like structures and droplets have been grown for longer pulse durations. The periodicity of LIPSS increases and density of dot-like structures decreases with increasing pulse duration. The chemical and structural modifications of irradiated Cr have been revealed by Raman spectroscopy. It confirms the formation of new bands of chromium oxides and enol complexes or Cr-carbonyl compounds. The peak intensities of identified bands are dependent upon laser fluence and pulse duration.
    Radiation Effects and Defects in Solids 04/2015; DOI:10.1080/10420150.2015.1023202
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    ABSTRACT: Gamma radiation-induced radicals of 2-methylglutaric acid (2MG), diethyl amino malonate hydrochloride (DEAMHCl), ethyl malonate monoamide have been investigated at room temperature by the electron paramagnetic resonance technique. The type of radicals formed and their room temperature stability were evaluated. Three different radicals have been detected. The free radicals formed in compounds were attributed to the HOOCCH3ĊCH2CH2 COOH, CH3ĊHCO2CHNH2COCH2CH3 HCl and NH2COCH2COOĊHCH3 radicals, respectively. The results were found to be in good agreement with the existing literature data and theoretical predictions conformation.
    Radiation Effects and Defects in Solids 04/2015; DOI:10.1080/10420150.2015.1018261
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    ABSTRACT: Radiation-sensing Field Effect Transistors (RadFETs or MOSFET dosimeters) with SiO2 gate dielec- tric have found applications in space, radiotherapy clinics, and high-energy physics laboratories. More sensitive RadFETs, which require modifications in device design, including gate dielectric, are being con- sidered for personal dosimetry applications. This paper presents results of a detailed study of the RadFET energy response simulated with PENELOPE Monte Carlo code. Alternative materials to SiO2 were inves- tigated to develop high-efficiency new radiation sensors. Namely, in addition to SiO2, Al2O3 and HfO2 were simulated as gate material and deposited energy amounts in these layers were determined for photon irradiation with energies between 20 keV and 5 MeV. The simulations were performed for capped and uncapped configurations of devices irradiated by point and extended sources, the surface area of which is the same with that of the RadFETs. Energy distributions of transmitted and backscattered photons were estimated using impact detectors to provide information about particle fluxes within the geometrical struc- tures. The absorbed energy values in the RadFETs material zones were recorded. For photons with low and medium energies, the physical processes that affect the absorbed energy values in different gate mate- rials are discussed on the basis of modelling results. The results show that HfO2 is the most promising of the simulated gate materials.
    Radiation Effects and Defects in Solids 03/2015; DOI:10.1080/10420150.2015.1010167
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    ABSTRACT: To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼300 Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400 Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25 min resulted in partial recovery of transport properties and device performance.
    Radiation Effects and Defects in Solids 03/2015; DOI:10.1080/10420150.2015.1010170
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    ABSTRACT: The electron paramagnetic resonance (EPR) parameters (g factors gx, gy, gz and hyperfine structure constants Ax, Ay, Az) for Cu2+ in (NH4)2Mg(SO4)2·6H2O (DHMS) crystal are theoretically investigated using the high-order perturbation formulas of these parameters. In the calculations, the ligand orbital and spin-orbit coupling for the impurity Cu2+ are taken into account; the required crystal-field parameters are estimated from the superposition model which enables correlation of the crystal-field parameters and hence the EPR parameters with the local structure of the impurity center. The ligand orbital and the spin-orbit coupling contributions are included on the basis of the cluster approach. Based on the calculation, the theoretical EPR parameters show good agreement with the observed values. The results are discussed.
    Radiation Effects and Defects in Solids 03/2015; DOI:10.1080/10420150.2015.1018260
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    ABSTRACT: The Prague Asterix Laser System (PALS) Research Infrastructure (RI) in Prague, one of only four kJ-class laser facilities in EU, has been offering its beam time to European researchers for already 14 years, since 2004 in the framework of the LASERLAB-Europe consortium. Till June 2014, the PALS RI has provided 4313 experimental days for a total of 41 projects with 303 international users from 42 different research institutions. Its principal experimental facility is a terawatt sub-ns iodine laser (1315 nm) with an optional plasma-based zinc XUV laser (21.2 nm), and an auxiliary Ti:Sapphire fs laser (1 J, 70 fs) exploited for femtosecond plasma probing and experiments with synchronised femtosecond and sub-nanosecond laser pulses at mean laser intensities of up to 30 PW/cm2. The lasers are equipped with several target facilities and rich sets of instruments for both active and passive plasma diagnostics. The PALS main research areas include development and applications of secondary laser sources of high-energy ions and both coherent and non-coherent high-intensity XUV radiation, laboratory astrophysical and inertial fusion-relevant studies. In this paper, the main results having been achieved at PALS in the framework of LASERLAB-EUROPE international access activities during the last four years are highlighted.
    Radiation Effects and Defects in Solids 03/2015; DOI:10.1080/10420150.2015.1010169
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    ABSTRACT: Ion acceleration by ultrashort laser pulses of very high intensities of the order 1022 W/cm2 is studied by two-dimensional Particle-In-Cell simulations. We show that laser normal incidence is preferred for such high intensities. For linearly polarized laser radiation, higher maximum proton/ion energies are achieved than for circular polarization. For linear polarization, the transition from the target normal sheath acceleration to the acceleration on the target front side by the radiation pressure is analyzed in detail. The transition intensity is increasing with the target thickness. The radiation pressure dominated regime leads to considerably higher number of accelerated protons and thus to a higher acceleration efficiency.
    Radiation Effects and Defects in Solids 03/2015; DOI:10.1080/10420150.2014.999070
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    ABSTRACT: Swift heavy ions induce a Gaussian temperature distribution Θ(r) in insulators which depend neither on the physical properties of the solid nor on the kind of the projectiles. In this paper, we show that all experimental data suitable for analysis confirm the validity of Θ(r). The same result is obtained for ZrSiO4, MgAl2O4, KTiOPO4, Al2O3 and Y2O3, where systematic experiments have not been performed yet. The analysis demonstrates that Θ(r) may be valid in biomolecular targets and in high-Tc superconductors as well. The Fourier equation cannot reproduce the relation Θ(r); thus, it is not suitable for the estimation of the ion-induced temperatures. The consequences of the uniformity in track formation must also affect other radiation-induced effects.
    Radiation Effects and Defects in Solids 02/2015; DOI:10.1080/10420150.2014.996880