# Optical and Quantum Electronics (OPT QUANT ELECTRON)

Publisher: Springer Verlag

## Journal description

Optical and Quantum Electronics provides an international forum for the publication of original research papers tutorial reviews and letters in such fields as optical physics optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics publishes papers on the following topics: semiconductors solid state and gas lasers optical communication systems fibres and planar waveguides non-linear optics optoelectronic devices ultra-fast phenomena optical storage optical materials photonic switching optics in computers and coherent optics.

## Impact Factor Rankings

2015 Impact Factor Available summer 2016 0.987 1.078 0.987 0.822 0.513 0.657 0.761 0.718 0.644 0.688 1 0.879 0.732 0.706 0.602 0.876 0.886 0.552 0.472 0.921 1.303 1.01 1.267

## Impact factor over time

Impact factor
.
Year

5-year impact 0.94 >10.0 0.32 0.00 0.22 Optical and Quantum Electronics website Optical and quantum electronics (Online), OQE 0306-8919 37788646 Document, Periodical, Internet resource Internet Resource, Computer File, Journal / Magazine / Newspaper

## Publisher details

• Pre-print
• Author can archive a pre-print version
• Post-print
• Author can archive a post-print version
• Conditions
• Author's pre-print on pre-print servers such as arXiv.org
• Author's post-print on author's personal website immediately
• Author's post-print on any open access repository after 12 months after publication
• Publisher's version/PDF cannot be used
• Published source must be acknowledged
• Must link to publisher version
• Set phrase to accompany link to published version (see policy)
• Articles in some journals can be made Open Access on payment of additional charge
• Classification
green

## Publications in this journal

• ##### Article: Fluorescence quenching of Rhodamine 6G with different concentrations by laser ablated gold nanoparticles
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ABSTRACT: Colloidal gold nanoparticles are prepared by laser ablation method and characterized by UV–Visible spectrometry and Transmission Electron Microscopy. Fluorescence quenching of Rhodamine 6G dye with different concentration, from 0.05 to 15 μM, in the presence of gold nanoparticles have been investigated. The optical absorption and fluorescence emission of samples are studied. Shift of the fluorescence peaks in the presence of gold nanoparticles are the same as the absorption peaks for different concentrations. The stokes shift of Rhodamine 6G in different concentrations with and without gold nanoparticles is constant. Experimental quantum yield are calculated. Due to the local field enhancement by gold nanoparticles, the absorbed power of the samples in presence of nanoparticles are increased and the fluorescence intensity and fluorescence quantum yield are decreased. Also, the energy transfer efficiency is measured. Experimental results showed that at dye concentration range of our studies the presence of gold nanoparticles in the mixture results in fluorescence quenching.
Optical and Quantum Electronics 11/2015; 47(11):3467-3476. DOI:10.1007/s11082-015-0222-2
• ##### Article: Near infrared ultra compact phase retarders based on photonic superlattices containing fullerene layers
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ABSTRACT: In this paper, we report the analysis of the electromagnetic wave transmission having a wave length near infrared propagating in Fibonacci quasiperiodic multilayer structures made of fullerene and germanium materials. We observe that within the stop band the reflection phase difference changes smoothly and increases with the increasing of the incident angle. In the center of the gap the reflection phase difference remains almost unchanged in a broad wavelength band. Especially, at both the edges of the gap the reflection phase difference keeps zero in spite of the change of incident angle. Basing on our results, the supposed structure provides a convenient way to design very compact phase controllers such as phase retarders.
Optical and Quantum Electronics 11/2015; 47(11). DOI:10.1007/s11082-015-0235-x
• ##### Article: Synthesis and Investigating of Electrical, Magnetical, Optical and Morphology Properties of Semicontinuous Metallic Nanostructures

Optical and Quantum Electronics 10/2015;
• ##### Article: Utilizing the plasmonic resonance to enhance three wave mixing effects in nano-scale cut-wire
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ABSTRACT: In this paper, quantitative study of the enhanced three wave mixing effects from periodic array of nano-scale golden cut-wires embedded in nonlinear dielectric is performed. Geometrical parameters of the considered structure are chosen so that the plasmonic resonance occurs in the wavelength 1.5 μm. Plasmonic resonance of this structure gives rise to the localization factor significantly larger than that of the cut-wire structures with no plasmonic resonance. Considering the surrounding medium of the cut-wire a typical second-order nonlinear optical medium, enhancement of the nonlinearity of this nonlinear medium is illustrated. Since the mentioned structure can be considered a homogeneous nonlinear medium with the effective nonlinear susceptibility, nonlinear retrieval method is used to determine the effective nonlinear susceptibility for all four frequency combinations. Maximum enhancement of the effective susceptibility is obtained for the second harmonic generation of the applied wave with the frequency corresponding to the plasmonic resonance, with the enhancement up to two orders of magnitude. Efficiency of the second harmonic generation in this resonant structure surrounded with nonlinear dielectric is calculated to be 30 times more than that of the nonlinear dielectric with the same dimensions.
Optical and Quantum Electronics 10/2015; 47(10). DOI:10.1007/s11082-015-0211-5
• ##### Article: Saturation and reverse saturable absorption in semiconductor doped glass and its application to parallel logic gates
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ABSTRACT: We report switch over from saturable absorption to reverse saturable absorption behavior in semiconductor doped glass (Schott-RG850) with increase in femtosecond laser excitation intensity. About ninefold increase in the normalized transmission was achieved experimentally. Two-photon absorption, saturation intensity and free carrier absorption are taken into account to analyze results obtained from Z-scan experiments. Numerical fitting to the experimental data indicates that consideration of two-photon absorption in the sample is important despite having strong linear absorption at excitation wavelength to explain large decrease in transmission at high intensity. Further, to show the applicability of such interesting nonlinear transmission behavior we have envisaged all-optical OR, AND, and XOR logic gates in parallel.
Optical and Quantum Electronics 10/2015; 47(10). DOI:10.1007/s11082-015-0209-z
• ##### Article: Preface: the 2014 international workshop on Optical Wave (and Waveguide) Theory and Numerical Modelling

Optical and Quantum Electronics 09/2015; DOI:10.1007/s11082-015-0257-4
• ##### Article: Li doped ZnO thin film: effect of substrate temperature on structure, optical and electrical properties
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ABSTRACT: RF magnetron sputtering technique was employed to deposit Li-doped ZnO thin films onto quartz substrate at different substrate temperatures ranging from room temperature (RT) to 500 $$^{\circ }\hbox {C}$$. X-ray diffraction analysis revealed that the deposited films had a hexagonal-wurtzite crystal structure with preferred orientation along the c-axis. Increasing the substrate temperature improved the crystallinity and caused a significant increase in the crystallite size (182 nm) for the film deposited at 500 $$^{\circ }\hbox {C}$$. The energy band gap of the films deposited at RT, 350, 400, 450 and 500 $$^{\circ }\hbox {C}$$ were found to be 3.292, 3.282, 3.281, 3.28 and 3.269 eV, respectively. All films exhibited a broad UV-violet emission band centered on 407 nm and attributed to the radiative recombination processes near the band edge. A Hall mobility of $$\sim$$33.3 $$\hbox {cm}^{2}$$/V s, concentration ($$n$$) of $$\sim$$7.6 $$\times 10^{18}\,\hbox {cm}^{-3}$$ and resistivity of $$\sim$$39.7 $$\Omega$$-cm were obtained for the film deposited at 500 $$^{\circ }\hbox {C}$$. The results show that the substrate temperature plays a crucial role in the structural, morphological, optical and electrical properties.
Optical and Quantum Electronics 09/2015; 47(12). DOI:10.1007/s11082-015-0256-5
• ##### Article: Reduction of data acquisition time in Raman spectroscopy imaging using structure based compressive sampling algorithm
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ABSTRACT: The Bayesian approach that utilizes the sparsity constraint and a priori statistical information to obtain near optimal estimates is presented. In addition, the wealthy structure of the sensing matrix including modularity, orthogonality and order recursive calculations is used to develop a fast sparse recovery algorithm. The performance of this algorithm is quite close to Convex Relaxation and Fast Bayesian Matching Pursuit algorithms at low sparsity rate while it outperforms Orthogonal Matching Pursuit algorithm by approximately 3 dB for the studied range of sparsity. The results show that the Structure based Compressive Sampling is a promising tool for obtaining Raman image reconstructions of quality in a reduced time of acquisition.
Optical and Quantum Electronics 09/2015; 47(12). DOI:10.1007/s11082-015-0253-8
• ##### Article: Numerical modeling of long sub-wavelength patterned structures
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ABSTRACT: The modeling of Cavity Resonator Integrated Grating Filter (CRIGF) structures, which are long but finite sub wavelength-patterned structures composed with a grating in-out coupler flanked with two Bragg reflectors, is challenging for any numerical method. We show how a numerical code based on RCWA, usually dedicated to model periodic structures, can be used, with minor modifications, to model CRIGFs within a reasonable time of calculation with a personal computer. Our results are in agreement with the calculations based on the FDTD method published in the literature.
Optical and Quantum Electronics 09/2015; 47(9). DOI:10.1007/s11082-015-0189-z
• ##### Article: Simulation and optimization of current matching multi-junction InGaN solar cells
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ABSTRACT: In this work, theoretical investigation of the InGaN multi-junction solar cells is carried out. Calculations were performed under 1-sun AM1.5 using the one diode ideal model and respecting rigorously the current matching condition. Tandem cells comprising two, three and four junctions were simulated. Optimum compositions of the sub-cells have been identified and conversion efficiencies of 25.9, 34.7, 39.7 and 42.2 % for one, two, three and four junctions, respectively are obtained.
Optical and Quantum Electronics 08/2015; 47(12). DOI:10.1007/s11082-015-0254-7
• ##### Article: Subluminal and superluminal light propagation in the V-type system of the second kind
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ABSTRACT: We study the change of the probe field group velocity from subluminal to superluminal range for the V-type system of the second kind. We solve numerically the density matrix equations system and apply it to a system from the LiH molecule to find the group index of the probe field. We show that the group index of the probe field can be changed from positive to negative within the appropriate choice of the relative phase between the probe and coupling field phases, the incoherent pumping rate and probe detuning.
Optical and Quantum Electronics 08/2015; 47(12). DOI:10.1007/s11082-015-0248-5
• Source
##### Article: Variable frequency photonic crystals
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ABSTRACT: In this paper, we have firstly proposed a new one-dimensional variable frequency photonic crystals (VFPCs), and calculated the transmissivity and the electronic field distribution of VFPCs with and without defect layer, and considered the effect of defect layer and variable frequency function on the transmissivity and the electronic field distribution. We have obtained some new characteristics for the VFPCs, which should be help to design a new type optical devices.
Optical and Quantum Electronics 08/2015; 47(8). DOI:10.1007/s11082-015-0174-6
• ##### Article: Method to design alternating current light-emitting diodes luminous flux
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ABSTRACT: Fluctuation of current through alternating current operated light-emitting diodes (AC LEDs) make luminous flux simply equivalent to the product of power consumption and luminous efficiency unreasonable, unlike constant current scenario. Based on application model and average luminous efficiency introduced by this paper, relationship between AC LEDs luminous flux and its application circuit parameters, including balance resistor, threshold voltage and equivalent resistor of LED etc. was presented. Then method to design AC LEDs through single LED photoelectric characters to meet luminous flux requirement was given.
Optical and Quantum Electronics 08/2015; DOI:10.1007/s11082-015-0241-z
• ##### Article: Stress sensing characteristics of two-dimensional photonic crystal cross-waveguide geometry
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ABSTRACT: A two-dimensional photonic crystal cross-waveguide consisting of dielectric rods array immersed in air is designed. The optical field pattern and transmission spectra are analyzed by finite difference time domain method. The propagation characteristics and stress sensing behavior of photonic crystal are emphasized through analyzing the linear shift of central wavelength. The results show that optimized cross-waveguide can be used as a high performance dual-channel stress sensing device based on tunable photonic crystal structure.
Optical and Quantum Electronics 08/2015; 47(12). DOI:10.1007/s11082-015-0250-y
• ##### Article: Investigation on an ultra-compact Mach–Zehnder interferometer electro-optic switch using poled-polymer/silicon slot waveguide
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ABSTRACT: By using poled-polymer/silicon slot waveguides in the active region and employing the Pockels effect of the poled-polymer, we propose a kind of Mach–Zehnder interferometer (MZI) electro-optic (EO) switch operated at 1550 nm. Dependencies of switching characteristics versus the slot waveguide parameters are investigated, including EO overlap integral, power ratio confined in the slot, and voltage-length product. Given the dimension of the silicon strip of 190 × 300 nm, as the slot width varies within 50–100 nm, the switching voltage can be as low as 1.0 V with only 0.17–0.35 mm active region length, and the whole device length is only about 770–950 μm. For the switch with 50 nm slot width, the insertion loss is about 4.42 dB under both operation states, and the crosstalk under cross-state and that under bar-state are about −48.2 and −65.3 dB, respectively. An impressive advantage of this switching structure lies that the voltage-length product (0.17–0.35 V mm) is at least 19–40 times smaller than that of the traditional polymer MZI EO switch (6.69 V mm). Compared with our previously reported two kinds of MZI or microring resonator assisted MZI EO switches, this switch does exhibit some superior characteristics, including low switching voltage, compact device size and small wavelength dependency, due to the use of slot waveguides in the MZI EO region.
Optical and Quantum Electronics 08/2015; 47(12). DOI:10.1007/s11082-015-0246-7