Ultramicroscopy Journal Impact Factor & Information

Publisher: Microscopy Society of America; Israel Society for Microscopy; Scandinavian Society for Electron Microscopy; Netherlands Society of Electron Microscopy; Swiss Society for Electron Microscopy; All authors, Elsevier

Journal description

Scientists engaged in ultrastructure research seem to fall into two overlapping categories. One group uses existing tools and methods to advance knowledge in particular disciplines. The second group is committed to advancing the tools and methods themselves. For the benefit of both groups, this work finds its outlet in Ultramicroscopy, a journal initiated to provide a forum for investigators and to concentrate otherwise widely dispersed knowledge, promoting cross-fertilization between the two groups. This communication between developer and user covers all aspects - fundamental and technical - pertaining to ultramicroscopic elucidation of structure, ranging from particle optics to radiation interaction.

Current impact factor: 2.75

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 2.745
2012 Impact Factor 2.47
2011 Impact Factor 2.471
2010 Impact Factor 2.061
2009 Impact Factor 2.067
2008 Impact Factor 2.629
2007 Impact Factor 1.996
2006 Impact Factor 1.706
2005 Impact Factor 2.49
2004 Impact Factor 2.215
2003 Impact Factor 1.665
2002 Impact Factor 1.772
2001 Impact Factor 1.89
2000 Impact Factor 1.695
1999 Impact Factor 2.244
1998 Impact Factor 2.045
1997 Impact Factor 1.6

Impact factor over time

Impact factor

Additional details

5-year impact 2.35
Cited half-life 7.80
Immediacy index 0.78
Eigenfactor 0.02
Article influence 1.01
Website Ultramicroscopy website
Other titles Ultramicroscopy (Online)
ISSN 0304-3991
OCLC 39196475
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details


  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Pre-print allowed on any website or open access repository
    • Voluntary deposit by author of authors post-print allowed on authors' personal website, arXiv.org or institutions open scholarly website including Institutional Repository, without embargo, where there is not a policy or mandate
    • Deposit due to Funding Body, Institutional and Governmental policy or mandate only allowed where separate agreement between repository and the publisher exists.
    • Permitted deposit due to Funding Body, Institutional and Governmental policy or mandate, may be required to comply with embargo periods of 12 months to 48 months .
    • Set statement to accompany deposit
    • Published source must be acknowledged
    • Must link to journal home page or articles' DOI
    • Publisher's version/PDF cannot be used
    • Articles in some journals can be made Open Access on payment of additional charge
    • NIH Authors articles will be submitted to PubMed Central after 12 months
    • Publisher last contacted on 18/10/2013
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: Cathodoluminescence (CL) studies are reported on phosphors in a field emission scanning electron microscope (FESEM). ZnO: Zn and other luminescent powders manifest a bright ring around the periphery of the particles: this ring enhances the contrast. Additionally, particles resting on top of others are substantially brighter than underlying ones. These phenomena are explained in terms of the combined effects of electrons backscattered out of the particles, together with light absorption by the substrate. The contrast is found to be a function of the particle size and the energy of the primary electrons. Some phosphor materials exhibit a pronounced comet-like structure at high scan rates in a CL-image, because the particle continues to emit light after the electron beam has moved to a position without phosphor material. Image analysis has been used to study the loss of brightness along the tail and hence to determine the decay time of the materials. The effect of phosphor saturation on the determination of decay times by CL-microscopy was also investigated.
    Ultramicroscopy 05/2015; DOI:10.1016/j.ultramic.2015.05.009
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    ABSTRACT: We demonstrate absolute scale agreement between the number of X-ray counts in energy dispersive X-ray spectroscopy using an atomic-scale coherent electron probe and first-principles simulations. Scan-averaged spectra were collected across a range of thicknesses with precisely determined and controlled microscope parameters. Ionization cross-sections were calculated using the quantum excitation of phonons model, incorporating dynamical (multiple) electron scattering which is seen to be important even for very thin specimens.
    Ultramicroscopy 05/2015; DOI:10.1016/j.ultramic.2015.05.010
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    ABSTRACT: Spatial coupling during catalytic ignition of CO oxidation on μm-sized Pt(hkl) domains of a polycrystalline Pt foil has been studied in situ by PEEM (photoemission electron microscopy) in the 10-5 mbar pressure range. The same reaction has been examined under similar conditions by FIM (field ion microscopy) on nm-sized Pt(hkl) facets of a Pt nanotip. Proper orthogonal decomposition (POD) of the digitized FIM images has been employed to analyze spatiotemporal dynamics of catalytic ignition. The results show the essential role of the sample size and of the morphology of the domain (facet) boundary in the spatial coupling in CO oxidation.
    Ultramicroscopy 05/2015; DOI:10.1016/j.ultramic.2015.05.012
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    ABSTRACT: Using soft x-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires[1]. Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×1021 at cm−3 is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires.
    Ultramicroscopy 05/2015; DOI:10.1016/j.ultramic.2015.05.007
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    ABSTRACT: Electron vortex beams are distorted by scattering within a crystal, so that the wavefunction can effectively be decomposed into many vortex components. Using a Bloch wave approach equations are derived for vortex beam decomposition at any given depth and with respect to any frame of reference. In the kinematic limit (small specimen thickness) scattering largely takes place at the neighbouring atom columns with a local phase change of π/2rad. When viewed along the beam propagation direction only one vortex component is present at the specimen entrance surface (i.e. the 'free space' vortex in vacuum), but at larger depths the probe is in a mixed state due to Bragg scattering. Simulations show that there is no direct correlation between vortex components and the 〈Lz〉 pendellösung, i.e. at a given depth probes with relatively constant 〈Lz〉 can be in a more mixed state compared to those with more rapidly varying 〈Lz〉. This suggests that minimising oscillations in the 〈Lz〉 pendellösung by probe channelling is not the only criterion for generating a strong electron energy loss magnetic circular dichroism (EMCD) signal. Copyright © 2015 Elsevier B.V. All rights reserved.
    Ultramicroscopy 05/2015; 157. DOI:10.1016/j.ultramic.2015.05.004
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    ABSTRACT: Orientation contrast obtained by an in-lens secondary electron detector in a scanning electron microscope from electropolished/etched metals is reported. The imaging conditions for obtaining such orientation contrast are defined. The mechanism responsible for the formation of the orientation contrast is explained, and an application example of this new imaging method is given. Copyright © 2015 Elsevier B.V. All rights reserved.
    Ultramicroscopy 05/2015; 156. DOI:10.1016/j.ultramic.2015.05.005
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    ABSTRACT: Artefacts in atom probe tomography can impact the compositional analysis of microstructure in atom probe studies. To determine the integrity of information obtained, it is essential to understand how the positioning of features influences compositional analysis. By investigating the influence of feature orientation within atom probe data on measured composition in microstructural features within an AA2198 Al alloy, this study shows differences in the composition of T1 (Al2CuLi) plates that indicates imperfections in atom probe reconstructions. The data fits a model of an exponentially-modified Gaussian that scales with the difference in evaporation field between solutes and matrix. This information provides a guide for obtaining the most accurate information possible. Copyright © 2015 Elsevier B.V. All rights reserved.
    Ultramicroscopy 04/2015; DOI:10.1016/j.ultramic.2015.04.005
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    ABSTRACT: We look at the new challenges associated with Atom Probe Tomography of insulators and semiconductors with regard to local fields inside and on the surface of such materials. The theoretical discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion. To understand Atom Probe results on the field evaporation of insulators and semiconductors we use density functional theory on ZnO clusters to follow the structural and electronic changes during field evaporation and to obtain potential energy curves, HOMO-LUMO gaps, field distributions, desorption pathways and fragments, dielectric constants, and polarizabilities. We also examine the effects of electric field reversal on the evaporation of ZnO and compare the results with Si. Copyright © 2015 Elsevier B.V. All rights reserved.
    Ultramicroscopy 03/2015; DOI:10.1016/j.ultramic.2015.03.011
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    ABSTRACT: An analytical model describing the field evaporation dynamics of a tip made of a thin layer deposited on a substrate is presented in this paper. The difference in evaporation field between the materials is taken into account in this approach in which the tip shape is modeled at a mesoscopic scale. It was found that the non-existence of sharp edge on the surface is a sufficient condition to derive the morphological evolution during successive evaporation of the layers. This modeling gives an instantaneous and smooth analytical representation of the surface that shows good agreement with finite difference simulations results, and a specific regime of evaporation was highlighted when the substrate is a low evaporation field phase. In addition, the model makes it possible to calculate theoretically the tip analyzed volume, potentially opening up new horizons for atom probe tomographic reconstruction. Copyright © 2015. Published by Elsevier B.V.
    Ultramicroscopy 03/2015; DOI:10.1016/j.ultramic.2015.03.010
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    ABSTRACT: Environmental transmission electron microscopy (TEM) has enabled in situ experiments in a gaseous environment with high resolution imaging and spectroscopy. Addressing scientific challenges in areas such as catalysis, corrosion, and geochemistry can require pressures much higher than the ∼20mbar achievable with a differentially pumped environmental TEM. Gas flow stages, in which the environment is contained between two semi-transparent thin membrane windows, have been demonstrated at pressures of several atmospheres. However, the relationship between the pressure at the sample and the pressure drop across the system is not clear for some geometries. We demonstrate a method for measuring the gas pressure at the sample by measuring the ratio of elastic to inelastic scattering and the defocus of the pair of thin windows. This method requires two energy filtered high-resolution TEM images that can be performed during an ongoing experiment, at the region of interest. The approach is demonstrated to measure greater than atmosphere pressures of N2 gas using a commercially available gas-flow stage. This technique provides a means to ensure reproducible sample pressures between different experiments, and even between very differently designed gas-flow stages. Copyright © 2015 Elsevier B.V. All rights reserved.
    Ultramicroscopy 02/2015; 153. DOI:10.1016/j.ultramic.2015.01.002
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    ABSTRACT: A newly developed carbon cone nanotip (CCnT) has been used as field emission cathode both in low voltage SEM (30 kV) electron source and high voltage TEM (200 kV) electron source. The results clearly show, for both technologies, an unprecedented stability of the emission and the probe current with almost no decay during 1 h, as well as a very small noise (rms less than 0.5%) compared to standard sources which use tungsten tips as emitting cathode. In addition, quantitative electric field mapping around the FE tip have been performed using in situ electron holography experiments during the emission of the new tip. These results show the advantage of the very high aspect ratio of the new CCnT which induces a strong enhancement of the electric field at the apex of the tip, leading to very small extraction voltage (some hundred of volts) for which the field emission will start. The combination of these experiments with emission current measurements has also allowed to extract an exit work function value of 4.8 eV.KeywordsField emissionElectrons sourcesElectron holographyCarbon tips
    Ultramicroscopy 12/2014; 151. DOI:10.1016/j.ultramic.2014.11.021