Applied Physics Letters (APPL PHYS LETT)

Publisher: American Institute of Physics, American Institute of Physics

Journal description

Applied Physics Letters is a weekly journal featuring concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, Applied Physics Letters offers prompt publication of new experimental and theoretical papers bearing on applications of physics phenomena to all branches of science, engineering, and modern technology.

Current impact factor: 3.52

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 3.515
2012 Impact Factor 3.794
2011 Impact Factor 3.844
2010 Impact Factor 3.82
2009 Impact Factor 3.554
2008 Impact Factor 3.726
2007 Impact Factor 3.596
2006 Impact Factor 3.977
2005 Impact Factor 4.127
2004 Impact Factor 4.308
2003 Impact Factor 4.049
2002 Impact Factor 4.207
2001 Impact Factor 3.849
2000 Impact Factor 3.906
1999 Impact Factor 4.184
1998 Impact Factor 3.349
1997 Impact Factor 3.033
1996 Impact Factor 3.092
1995 Impact Factor 3.029
1994 Impact Factor 3.072
1993 Impact Factor 3.503
1992 Impact Factor 3.537

Impact factor over time

Impact factor
Year

Additional details

5-year impact 3.82
Cited half-life 6.40
Immediacy index 0.62
Eigenfactor 0.59
Article influence 1.35
Website Applied Physics Letters website
Other titles Applied physics letters
ISSN 0003-6951
OCLC 1580952
Material type Periodical, Internet resource
Document type Journal / Magazine / Newspaper, Internet Resource

Publisher details

American Institute of Physics

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Publishers version/PDF may be used on author's personal website or institutional website
    • Authors own version of final article on e-print servers
    • Must link to publisher version or journal home page
    • Publisher copyright and source must be acknowledged
    • NIH-funded articles are automatically deposited with PubMed Central with open access after 12 months
    • For Medical Physics see AAPM policy
    • This policy does not apply to Physics Today
    • Publisher last contacted on 27/09/2013
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: The electric field effect on ferromagnetism offers a new dimension in the recent advancement of spintronics. We report on the gate control of transport properties in thin films of oxide-based ferromagnetic metal, SrRuO3. An electric double layer transistor configuration was utilized with an ionic liquid dielectric to apply a strong electric field on a SrRuO3 thin film of 5 monolayers in thickness. The application of gate voltage induced a clear electroresistance effect, despite a considerably-large initial carrier density of the order of 10(22) cm(-3). Furthermore, we found that the gate modulation of the anomalous Hall conductivity sigma(xy), which was as large as similar to +/- 40% at low temperatures, was about three times larger than that of the longitudinal conductivity sigma(xx). The variation of sigma(xy) is characterized by the power-law scaling relation with sigma(xx), which is widely observed in a bad metal regime of the charge transport. (C) 2014 AIP Publishing LLC.
    Applied Physics Letters 01/2016; 105(16). DOI:10.1063/1.4899145
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    ABSTRACT: We investigate the Hall transport characteristics of double-crossover divalent metal ion (Cu2+, Ni2+, Zn2+, and Co2+)-modified DNA (M-DNA) lattices grown on silica via substrate-assisted growth (SAG). The electronic characteristics of the M-DNA lattices are investigated by varying the concentration of the metal ions and then conducting Hall measurements, including resistivity, Hall mobility, carrier concentration, and magneto resistance. The tendency of the resistivity and Hall mobility was to initially decrease as the ion concentration increased, until reaching the saturation concentration (Cs) of each metal ion, and then to increase as the ion concentration increased further. On the other hand, the carrier concentration revealed the opposite tendency as the resistivity and Hall mobility. The specific binding (≤ Cs) and the nonspecific aggregates (> Cs) of the ions into the DNA lattices were significantly affected by the Hall characteristics. The numerical ranges of the Hall parameters revealed that the M-DNA lattices with metal ions had semiconductor-like characteristics. Consequently, the distinct characteristics of the electrical transport through M-DNA lattices will provide useful information on the practical use of such structures in physical devices and chemical sensors.
    Applied Physics Letters 06/2015; 106(26):263702. DOI:10.1063/1.4923377
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    ABSTRACT: We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.
    Applied Physics Letters 06/2015; 106(26):261103.
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    ABSTRACT: In this paper, the recently proposed technique to produce photonic jets (terajets at THz frequencies) using 3D dielectric cuboids is applied in the design of mesoscale cuboid-chain waveguide. The chains are basically designed with several dielectric cubes with dimensions λ0 along the x, y and z axes placed periodically along the axial z-axis and separated by an air-gap. Based on this, a systematic study of the focusing properties and wave guiding of this chain is performed when the air-gap between the dielectric cubes is changed from 0.25λ0 to 3λ0 with the best performance achieved at 2.5λ0. An analysis when losses are included in the cubes is also done, demonstrating a robust performance. Finally, the wave guiding is experimentally demonstrated at sub-THz frequencies with a good agreement with numerical results. The simulation results of focusing and transport properties are carried out using Finite Integration Technique. The results here presented may be scaled to any frequency ranges such as millimeter, sub-millimeter or optical frequencies.
    Applied Physics Letters 06/2015; 106(254102):254102-1-5. DOI:10.1063/1.4923186
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    ABSTRACT: The need for miniaturization without compromising cost and performance continues to motivate research in advanced capacitor devices. In this report, multilayer ceramic capacitors based on relaxor BaTiO3-Bi(Zn1/2Ti1/2)O3 (BT-BZT) were fabricated and characterized. In bulk ceramic embodiments, BT-BZT has been shown to exhibit relative permittivities greater than 1000, high resistivities (ρ > 1 GΩ-cm at 300 °C), and negligible saturation up to fields as high as 150 kV/cm. Multilayer capacitor embodiments were fabricated and found to exhibit similar dielectric and resistivity properties. The energy density for the multilayer ceramics reached values of ∼2.8 J/cm3 at room temperature at an applied electric field of ∼330 kV/cm. This represents a significant improvement compared to commercially available multilayer capacitors. The dielectric properties were also found to be stable over a wide range of temperatures with a temperature coefficient of approximately −2000 ppm/K measured from 50 to 350 °C, an important criteria for high temperature applications. Finally, the compatibility of inexpensive Ag-Pd electrodes with these ceramics was also demonstrated, which can have implications on minimizing the device cost.
    Applied Physics Letters 06/2015; 106(25):252901. DOI:10.1063/1.4922947
  • Applied Physics Letters 06/2015; DOI:10.1063/1.4922804
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    ABSTRACT: Deep-level defects were investigated in Cu2ZnSn(S,Se)4 and Cu2ZnSnS4 thin-films using transient photocapacitance (TPC) spectroscopy. A deep-defect, OH1 centered around 1.0 eV above the valance-band (E V) of Cu2ZnSnS4 has been identified at room temperature (RT). However, OH1-defect could be identified in Cu2ZnSn(S,Se)4 at low temperature only. Absence of OH1-defect in Cu2ZnSn(S,Se)4 at RT explains its better performance comparing to Cu2ZnSnS4 solar-cell. A comparative study of the TPC spectra of the Cu(In,Ga)Se2 solar-cells was performed. Low intensity of defect-signal together with lower broadening of exponential band-tail in the TPC spectra were attributed to superior performance of Cu(In,Ga)Se2 solar-cells comparing to Cu2ZnSn(S,Se) counterpart.
    Applied Physics Letters 06/2015; 106(24):243905. DOI:10.1063/1.4922810