Applied Physics Letters (APPL PHYS LETT )

Publisher: American Institute of Physics, American Institute of Physics

Description

Applied Physics Letters is a weekly journal featuring concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, Applied Physics Letters offers prompt publication of new experimental and theoretical papers bearing on applications of physics phenomena to all branches of science, engineering, and modern technology.

Impact factor 3.52

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    Impact factor
  • 5-year impact
    3.82
  • Cited half-life
    6.40
  • Immediacy index
    0.62
  • Eigenfactor
    0.59
  • Article influence
    1.35
  • Website
    Applied Physics Letters website
  • Other titles
    Applied physics letters
  • ISSN
    0003-6951
  • OCLC
    1580952
  • Material type
    Periodical, Internet resource
  • Document type
    Journal / Magazine / Newspaper, Internet Resource

Publisher details

American Institute of Physics

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Publishers version/PDF may be used on author's personal website or institutional website
    • Authors own version of final article on e-print servers
    • Must link to publisher version or journal home page
    • Publisher copyright and source must be acknowledged
    • NIH-funded articles are automatically deposited with PubMed Central with open access after 12 months
    • For Medical Physics see AAPM policy
    • This policy does not apply to Physics Today
    • Publisher last contacted on 27/09/2013
  • Classification
    ​ green

Publications in this journal

  • Applied Physics Letters 01/2016; 105(16).
  • [Show abstract] [Hide abstract]
    ABSTRACT: A theoretical prediction by Wang et al. [Phys. Rev. B 82, 054405 (2010)] suggests the preferential transmission of majority-spin states with Δ1 symmetry across a magnesium interlayer in Fe/Mg/MgO/Fe based magnetic tunnel junctions. Here, we report experiments to probe this question in CoFe/Mg/CoFe structures. We find that the strength of the interlayer coupling decays exponentially with increasing the spacer thickness, however, a non-monotonic variation of the magnetoresistance as a function of the Mg layer is observed. These data may help revisit the role of the insertion of a Mg interface layer in MgO-based devices.
    Applied Physics Letters 01/2015; 106:032412.
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    ABSTRACT: In this letter, we study the near-field radiative heat transfer between two metamaterial substrates coated with silicon carbide (SiC) thin films. It is known that metamaterials can enhance the near-field heat transfer over ordinary materials due to excitation of magnetic plasmons associated with s polarization, while strong surface phonon polariton exists for SiC.By careful tuning of the optical properties of metamaterial it is possible to excite electrical and magnetic resonance for the metamaterial and surface phonon polaritons for SiC at different spectral regions, resulting in the enhanced heat transfer. The effect of the SiC film thickness at different vacuum gaps is investigated. Results obtained from this study will be beneficial for application of thin film coatings for energy harvesting.
    Applied Physics Letters 01/2015; 106:033106.
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    ABSTRACT: We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm2. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.
    Applied Physics Letters 01/2015; 106(3):032101.
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    ABSTRACT: Ta-layer thickness (t_Ta ) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE011 resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t Ta . For t Ta ≈ λ Ta (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V ISH between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ SH (from 10% to 40%). However, when t Ta ≫ λ Ta , the V ISH values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ SH within 4% deviation. The results will provide an outline for an accurate estimation of the θ SH for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.
    Applied Physics Letters 01/2015; 106(3):032409.
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    ABSTRACT: We investigate remote surface roughness (RSR) scattering by the SiO2/HfO2 interface in Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO2 and SiO2/HfO2 interfaces. Therefore, surface roughness and remote surface roughness cannot be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-κ/Metal gate technologies.
    Applied Physics Letters 01/2015; 106(2):023508.
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    ABSTRACT: Field emission characteristics of graphene nanoribbons (GNRs) synthesized by unzipping of multiwall carbon nanotubes using a facile hydrothermal route have been investigated at a base pressure of 1 × 10−8 mbar. The values of turn-on field, required to draw an emission current densities of 1 and 10 μA/cm2, are found to be 2.8 and 5.8 V/μm, respectively, and a maximum emission current density of 500 μA/cm2 has been drawn at an applied field of 9.8 V/μm. The emission current stability of the GNRs emitter was studied at preset values of 1 and 10 μA over a period of 3 h, and is found to be excellent. The field emission results demonstrated herein suggest that GNRs based field emitters can open up many opportunities for their potential utilization as large area field emitters in various vacuum micro-nanoelectronic devices such as flexible field emission displays, portable X-ray, and microwave tubes.
    Applied Physics Letters 01/2015; 106:023111.