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Division of Life Sciences
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Department of Chemistry
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Department of Physics
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    ABSTRACT: High-performing heterojunction devices were achieved by bringing an aluminum-doped ZnO (AZO) into contact with a p-Si substrate. A thin transparent AZO film was directly coated on pillar-array patterned Si and spontaneously formed a rectifying junction without any intentional doping process. Si pillar-arrays were designed to have 5 μm width with variation in periods (7 μm and 10 μm) used to modulate the surficial lengths. The light response is directly proportional to the surficial length enhancement. AZO/Si heterojunction devices showed strong dependence on the incident wavelengths. At a wavelength of 600 nm, the highest response ratio of 70,900% was achieved. We found that the locational superposition of the space charge region and the photo-generated region is crucial for light-reactive responses. We suggest an efficient geometric design scheme for highly efficient light-absorbers.
    Sensors and Actuators A Physical 09/2014; 217:183–188. DOI:10.1016/j.sna.2014.07.013
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    ABSTRACT: Manganese dioxide/reduced graphene oxide/indium tin oxide (MRI) and polypyrrole/reduced graphene oxide/indium tin oxide (PRI) electrodes were prepared via the chronopotentiometric-deposition of either manganese oxide or polypyrrole, respectively, onto a RGO/ITO film at a constant current density. Solid-state asymmetric supercapacitors (ASC) were assembled using MRI as the positive electrode and PRI as the negative electrode in a PVA/LiCl gel electrolyte. These devices displayed a power density of 7.4 kW/kg (for an energy density of 13 Wh/kg), an energy density of 16 Wh/kg (for a power density of 0.3 kW/kg), and a capacitance retention of 75% over 2000 cycles. The MRI//PRI ASC exhibited a much improved capacitive performance compared to the symmetric PRI//PRI (3 Wh/kg at 0.47 kW/kg) and MRI//MRI (9 Wh/kg at 0.12 kW/kg) supercapacitors. The superior capacitive performance of the MRI//PRI ASC was ascribed the improved conductivities and mechanical stabilities of MRI and PRI electrodes, obtained by preparing the polypyrrole and manganese oxide films on a graphene-coated electrode.
    Colloids and Surfaces A Physicochemical and Engineering Aspects 08/2014; 456:26–34. DOI:10.1016/j.colsurfa.2014.05.003
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    ABSTRACT: Aims The aim of the present study was to identify the potential therapeutic effects of BH3-mimetic gossypol on melanoma cells with acquired resistance to BRAF inhibitors. Main Methods The IC50 values of gossypol were determined using MTT assays in three melanoma cell lines with different resistance to BRAF inhibitor. The effects of gossypol on three melanoma cell lines were further examined by immunoblotting analysis, cell cycle analysis, flow cytometric apoptotic assay and autophagy assay. The functional role of autophagy in gossypol-induced growth inhibition was investigated using siRNA-mediated knockdown of Beclin-1. Key findings Gossypol retained its efficacy in BRAF-V600E melanoma clones with acquired resistance to BRAF inhibitors through a mechanism independent of MEK-ERK inhibition. Gossypol caused G2/M arrest in both BRAF mutant A375P and A375P/Mdr cells with high expression of p21Cip1, regardless of their drug resistance. Interestingly, we determined that the lack of gossypol-induced mitotic arrest in BRAF-WT-harboring SK-MEL-2 cells was associated with a low level of p21Cip1 expression. In addition, gossypol preferentially induced autophagy and apoptosis in the gossypol-sensitive cells and not in the gossypol-resistant SK-MEL-2 cells. In particular, alleviation of autophagy by knockdown of Beclin-1 partially caused a resistance to gossypol-induced cell cycle arrest at G2/M in BRAF-V600E cells with a concomitant decreased induction of apoptosis. Significance Taken together, these results suggest that gossypol may exhibit potential for the treatment of BRAF inhibitor-resistant tumors, but a functional p21Cip1 is a prerequisite for a positive response to its clinical application.
    Life sciences 04/2014; DOI:10.1016/j.lfs.2014.02.036


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    119, Academy-ro.Yeonsu-gu, Incheon, South Korea, Seoul, South Korea
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